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    pa 66 gf

    Abstract: MGFC40V7177 MGFC40V7177B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177B s<^pa,a' 7 .1 — 7 .7 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 .1 — 7 .7


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    MGFC40V7177B MGFC40V7177 pa 66 gf MGFC40V7177B PDF