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    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF GG17273 IRF614/615 IRF614 IRF615 IBF615