23C32000
Abstract: 23c3200 M23C32000
Text: GoldStar GM23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because
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GM23C32000
120/150ns.
42-DIP,
DDD4D44
23C32000
23c3200
M23C32000
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01C09
Abstract: No abstract text available
Text: GoldStar GM23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex
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GM23C32000FW
16BIT
23C32000FW
44-SOP,
100pF*
402fl757
00D4D4f
01C09
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GM23C32000
Abstract: GM23C32000A
Text: GM23C32000AFW LG Semicon Co.,Ltd. 4M x 8 / 2M x 16 BIT CMOS MASK ROM Description Pin Configuration The GM23C32000AFW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152 x 16 bits (word mode) and has an access time of
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GM23C32000AFW
120/150ns.
GM23C32000AFW
120/1ess.
015/A
GM23C32000FW
GM23C32000
GM23C32000A
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23C32000a
Abstract: ICX 639 23c3200
Text: GM23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of
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GM23C32000A
120/150ns.
23C32000A
GM23C32000A
120/150ns
ICX 639
23c3200
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4170A
Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL
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GM71C1000B/BL
GM71C4256B/BL
GM71C4100B/BL
GM71C4100C/CL
71C41OOD/DL
71C4400B/BL
71C4400C/CL
71C4400D/DL
GM71C
800A/AL
4170A
mask ROM
Dynamic RAM 4M x 8
71C4400B
GM23C410
64K x 8 BIT DYNAMIC RAM
Dynamic RAM 64K x 1
static+ram+32kx8
STATIC+RAM+6264
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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