Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.85g ■最大定格 / Maximum Ratings
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GSH10A10
GSH10A10/GSH10A10B
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.85g ■最大定格 / Maximum Ratings
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GSH10A10
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GSH10A10B
Abstract: No abstract text available
Text: 10A Avg. 100 Volts SBD GSH10A10B •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ
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GSH10A10B
Tc120
GSH10A10/GSH10A10B
20mVRMS,
100kHz,
GSH10A10B
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10B •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GSH10A10B
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10B •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GSH10A10B
GSH10A10/GSH10A10B
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.85g ■最大定格 / Maximum Ratings
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GSH10A10
GSH10A10/GSH10A10B
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GSH10A10
Abstract: No abstract text available
Text: 10A Avg. 100 Volts SBD GSH10A10 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー
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GSH10A10
Tc120
SymbolGSH10A10/GSH10A10B
20mVRMS,
100kHz,
GSH10A10/GSH10A10B
GSH10A10
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10A10B •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GSH10A10B
GSH10A10/GSH10A10B
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Untitled
Abstract: No abstract text available
Text: 100 Volts 10A Avg. GSH10A10 SBD •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー
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GSH10A10
GSH10A10/GSH10A10B
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Untitled
Abstract: No abstract text available
Text: 10A Avg. 100 Volts SBD GSH10A10B •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current
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GSH10A10B
20mVRMS,
100kHz,
GSH10A10/GSH10A10B
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10-10A
Abstract: GSH10A10B
Text: SBD T y p e : GSH10 SH10A 10A10B OULINE DRAWING FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage
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GSH10A10B
O-220AB
GSH10A10B
10-10A
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10 SH10A 10A10 OULINE DRAWING FEATURES *Similar to TO-220AC Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.85g Symbol Repetitive Peak Reverse Voltage
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GSH10
SH10A
10A10
O-220AC
GSH10A10
GSH10A10/GSH10A10B
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10A10
Abstract: GSH10A10
Text: SBD T y p e : GSH10 SH10A 10A10 OULINE DRAWING FEATURES *Similar to TO-220AC Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.85g Symbol Repetitive Peak Reverse Voltage
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GSH10A10
O-220AC
GSH10A10/GSH10A10B
10A10
GSH10A10
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tc122 20 5 3
Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85
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O-251
EA20QS04
EA20QS06
EA20QS09
EA20QS10
ESL03B03
EA30QS03L
EA30QS04
EA30QS06
EA30QS09
tc122 20 5 3
tc 122 25 5
tc122 25
TC-138
tc122
tc122 25 4
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GSH10 SH10A 10A10B OULINE DRAWING FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Approx Net Weight: 1.9g
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GSH10
SH10A
10A10B
O-220AB
GSH10A10B
GSH10A10/GSH10A10B
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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10A10
Abstract: GSH10A10
Text: SBD T y p e : GSH10 SH10A 10A10 OULINE DRAWING FEATURES *Similar to TO-220AC Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.85g Symbol Repetitive Peak Reverse Voltage
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GSH10A10
O-220AC
GSH10A10
10A10
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FSF05B60
Abstract: FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q
Text: 旧製品・現行品対応表 Discontinued products and their replacements No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 旧製品 現行品 Discon. Replacement
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11ES1
10EDB10
11ES2
10EDB20
10JDA10
10JDA20
10JDA40
10DDA10
10DDA20
10DDA40
FSF05B60
FSF10B60
F10P10Q
30pfb60
SF05A60-11TSF05B60-11A
C30P10Q
FCF20B60
f10p04q
F5KF20B
F10P06Q
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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GSH10A10B
Abstract: No abstract text available
Text: SBD T y p e : GSH10 SH10A 10A10B OULINE DRAWING FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Approx Net Weight: 1.9g
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GSH10A10B
O-220AB
GSH10A10/GSH10A10B
GSH10A10B
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