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    H2N7000 Search Results

    H2N7000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H2N7000 Hi-Sincerity Mocroelectronics N-Channel Enhancement Mode Transistor Original PDF

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    diode marking H2

    Abstract: H2N7000
    Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching


    Original     		PDF HE6267 H2N7000 H2N7000 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2

    H2N7000

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF HE6267 H2N7000 H2N7000

    H2N7000

    Abstract: No abstract text available
    Text: H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products


    Original     		PDF H2N7000 500mA 200mA H2N7000