HB56UW465EJN-6 |
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Hitachi Semiconductor
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4,194,304-word x 72-bit High Density Dynamic RAM |
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Original |
PDF
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HB56UW465EJN-6 |
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Renesas Technology
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32 MB Unbuffered EDO DRAM DIMM 4-Mword x 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M x 8 Compo |
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Original |
PDF
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HB56UW465EJN-6B |
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Renesas Technology
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4,194,304-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 B |
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Original |
PDF
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HB56UW465EJN-6L |
|
Hitachi Semiconductor
|
4,194,304-word x 72-bit High Density Dynamic RAM |
|
Original |
PDF
|
HB56UW465EJN-6L |
|
Renesas Technology
|
32 MB Unbuffered EDO DRAM DIMM 4-Mword x 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M x 8 Compo |
|
Original |
PDF
|