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Catalog Datasheet	MFG & Type	Document Tags	PDF
HBC807 Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.	Original	HE6830 HBC807 HBC807 OT-23 200oC 183oC 217oC 260oC 245oC	PDF
HLB122J Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in	Original	HE6830 HLB122J HLB122J O-252	PDF
HJ649A Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HJ649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ649A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C	Original	HE6830 HJ649A HJ649A O-252	PDF
HI123 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 1999.08.01 Page No. : 1/2 HI123 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI123 is designed for high voltage, high speed switching Circuits, and amplifier applications.	Original	HE6830-A HI123 HI123	PDF
marking A1 TRANSISTOR Abstract: HJ667A Y2 MARKING a5 marking Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C	Original	HE6830 HJ667A HJ667A O-252 183oC 217oC 260oC marking A1 TRANSISTOR Y2 MARKING a5 marking	PDF
HJ667A Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C	Original	HE6830-A HJ667A HJ667A	PDF
HJ669A Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C	Original	HE6830-A HJ669A HJ669A	PDF
HBC807 Abstract: marking 9fb 9FC SOT23 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.	Original	HE6830 HBC807 HBC807 OT-23 marking 9fb 9FC SOT23	PDF
A1 marking code amplifier Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C	Original	HE6830 HJ669A HJ669A O-252 183oC 217oC 260oC A1 marking code amplifier marking A1 TRANSISTOR Y2MARKING	PDF
transistor marking code 12W 80 Abstract: transistor marking code 12W marking code 12W transistor IC350 HJ6718 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 is designed for general purpose medium power amplifier and switching .	Original	HE6830-A HJ6718 HJ6718 transistor marking code 12W 80 transistor marking code 12W marking code 12W transistor IC350	PDF
HBC807 Abstract: HBC817 Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver	Original	HE6830 HBC807 HBC807 OT-23 -800mA HBC817 200oC 183oC 217oC 260oC	PDF