Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HGTG24N60D1 Search Results

    SF Impression Pixel

    HGTG24N60D1 Price and Stock

    Rochester Electronics LLC HGTG24N60D1

    UFS SERIES N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG24N60D1 Bulk 34
    • 1 -
    • 10 -
    • 100 $8.93
    • 1000 $8.93
    • 10000 $8.93
    		Buy Now

    Rochester Electronics LLC HGTG24N60D1D

    UFS SERIES N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG24N60D1D Bulk 29
    • 1 -
    • 10 -
    • 100 $10.4
    • 1000 $10.4
    • 10000 $10.4
    		Buy Now

    Harris Semiconductor HGTG24N60D1

    40A, 600V, RUGGED UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG24N60D1 24,999 1
    • 1 $8.59
    • 10 $8.59
    • 100 $8.07
    • 1000 $7.3
    • 10000 $7.3
    		Buy Now

    Harris Semiconductor HGTG24N60D1D

    40A, 600V, RUGGED UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG24N60D1D 9,092 1
    • 1 $10
    • 10 $10
    • 100 $9.4
    • 1000 $8.5
    • 10000 $8.5
    		Buy Now

    HGTG24N60D1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG24N60D1 Harris Semiconductor 24A, 600V N-Channel IGBT Original PDF
    HGTG24N60D1 Intersil 24A, 600V N-Channel IGBT Original PDF
    HGTG24N60D1D Harris Semiconductor 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF
    HGTG24N60D1D Harris Semiconductor 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF
    HGTG24N60D1D Intersil 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF

    HGTG24N60D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G24N60D1

    Abstract: G24N60 AN7254 AN7260 HGTG24N60D1
    Text: HGTG24N60D1 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss Description


    Original     		PDF HGTG24N60D1 O-247 500ns 150oC. G24N60D1 G24N60 AN7254 AN7260 HGTG24N60D1

    Untitled

    Abstract: No abstract text available
    Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		PDF HGTG24N60D1 delay100nà time150nà time900n

    HGTG24N60D1D

    Abstract: No abstract text available
    Text: HGTG24N60D1D Typical Performance Curves Continued 1300 TJ = +150oC, TC = +100oC, RGE = 25Ω, L = 500µH 80 fOP , OPERATING FREQUENCY (kHz) tD(OFF)I , TURN-OFF DELAY (ns) 1200 VCE = 480V, VGE = 10V 1100 VCE = 480V, VGE = 15V 1000 900 800 VCE = 240V, VGE = 10V


    Original     		PDF HGTG24N60D1D 150oC, 100oC, 150oC HGTG24N60D1D

    g24n60d1d

    Abstract: g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1
    Text: HGTG24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original     		PDF HGTG24N60D1D O-247 500ns 150oC. g24n60d1d g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1

    g24n60d1d

    Abstract: HGTG24N60D1D g24n60d1 AN7254 AN7260 g24n60d BVces
    Text: S E M I C O N D U C T O R HGTG24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG24N60D1D O-247 500ns 150oC. g24n60d1d HGTG24N60D1D g24n60d1 AN7254 AN7260 g24n60d BVces

    Untitled

    Abstract: No abstract text available
    Text: HGTG24N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		PDF HGTG24N60D1D delay100nà time150nà time900n

    g24n60d1

    Abstract: 240v DC motor AN7254 AN7260 HGTG24N60D1 G24N60
    Text: HGTG24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original     		PDF HGTG24N60D1 O-247 500ns 150oC. g24n60d1 240v DC motor AN7254 AN7260 HGTG24N60D1 G24N60

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS S E M I C O N D S E CT OR böE D • 4 3 02 27 1 G G S G 2 ti3 Lfll « H A S HGTG24N60D1D ÍE 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 24 Amp, 600 Volt • Latch Free Operation


    OCR Scan     		PDF HGTG24N60D1D O-247 500ns 60ri8

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS S E M I C O N D S E CT OR böE D 31 H a rris Hi IJ3Ü2E71 0 0 5 0 2 E 0 5 5 e I HGTG24N60D1 SEMICONDUCTOR * * • 24A, 600V N-Channel IGBT D ecem ber 1 993 Features Package • 24 Amp, 600 Volt JEDEC STYLE TO-247 TOP VIEW • Latch Free Operation


    OCR Scan     		PDF HGTG24N60D1 O-247 500ns

    g24n60d1

    Abstract: 24N60D1 24N60D
    Text: ^ ^ 3 HGTG24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A ,600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description Terminal Diagram


    OCR Scan     		PDF HGTG24N60D1 O-247 500ns g24n60d1 24N60D1 24N60D

    Untitled

    Abstract: No abstract text available
    Text: m HGTG24N60D1 H A R R IS S E M I C O N D U C T O R December 24A, 600V N-Channel IGBT 1993 Package Features JEDEC STYLE TO-247 TOP VIE H • 24 Amp, 600 Volt • Latch Free Operation O * • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    OCR Scan     		PDF HGTG24N60D1 O-247 500ns

    HGTH20N40E1D

    Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
    Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS


    OCR Scan     		PDF O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide

    24N60D1D

    Abstract: 24N60D 24n60d1 620 tg diode
    Text: f f l M A R R f â H G T G 2 N 4 6 D D 1 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode A p rii 19 9 5 Features Package JEDEC STYLE TO-247 • 24A .600V EMITTER • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF O-247 500ns 24N60D1D 24N60D 24n60d1 620 tg diode

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    hgtm24n60

    Abstract: No abstract text available
    Text: HA RR IS SEflICOND S E C T O R 3 HiEÎHS bflE ]> • 43G E 27 1 G Q S 0 S E 4 1T4 * H A S HGTM24N60D1 December 1993 24A, 600V N-Channel IGBT Package Features • 24 Amp, 600 Volt JEDEC TO-204AA BOTTOM VIEW • Latch Free Operation • Typical Fall Time <500ns


    OCR Scan     		PDF HGTM24N60D1 O-204AA 500ns hgtm24n60

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40