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    Untitled

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns


    Original     		PDF HLXSR01632 1x10-12 5x10-12 150nm N40-1497-000-000

    HLXSR01632

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Made changes to Table IA, parameters: IDDDOP3, IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. Made change to Figure 2; terminal 83, changed from NC to VDD. ksr APPROVED


    Original     		PDF IDDOPW40, IDDDOPW40, IDDOPR40, IDDDOPR40, HLXSR01632-DQH 5962H0820302VXC HLXSR01632-DVH