HMJE13009 Search Results

HMJE13009 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HMJE13009		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor		Original	PDF
HMJE13009A		Hi-Sincerity Mocroelectronics	12 AMPERE NPN SILICON POWER TRANSISTOR		Original	PDF
HMJE13009A		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor		Original	PDF
HMJE13009AR		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor		Original	PDF
HMJE13009R		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor		Original	PDF

HMJE13009 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
E13009a Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching	Original	PDF	HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 10sec E13009a 13009a 13009a TRANSISTOR mje13009a transistor 13009a
transistor MJ 13009 Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009 Text: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching	Original	PDF	HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
E 13009 Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009 Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	PDF	HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
HMJE13009AR Abstract: E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247 Text: HI-SINCERITY Spec. No. : HR200502 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009AR 12 Ampere NPN Silicon Power Transistor Description The HMJE13009AR is designed for high-voltage, high-speed power switching	Original	PDF	HR200502 HMJE13009AR HMJE13009AR O-247 120ns Collector-Emi20 183oC 217oC 260oC E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247
HMJE13009 Abstract: 24ADC HE200206 Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2002.09.04 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for	Original	PDF	HE200206 HMJE13009 HMJE13009 O-220AB 120ns 24ADC HE200206
13009a Abstract: E13009a HMJE13009A MJE13009A Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching	Original	PDF	HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 13009a E13009a MJE13009A