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    HN1D03F Search Results

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    HN1D03F Price and Stock

    Toshiba America Electronic Components HN1D03FTE85LF

    DIODE ARRAY GP 80V 100MA SC-74
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    DigiKey HN1D03FTE85LF Cut Tape 23,738 1
    • 1 $0.28
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    HN1D03FTE85LF Digi-Reel 23,738 1
    • 1 $0.28
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    • 100 $0.28
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    HN1D03FTE85LF Reel 21,000 3,000
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    • 10000 $0.06565
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    Mouser Electronics HN1D03FTE85LF 13,140
    • 1 $0.28
    • 10 $0.186
    • 100 $0.093
    • 1000 $0.084
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    Toshiba America Electronic Components HN1D03FU,LF

    DIODE ARRAY GP 80V 80MA US6
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    DigiKey HN1D03FU,LF Cut Tape 4,277 1
    • 1 $0.26
    • 10 $0.169
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    HN1D03FU,LF Digi-Reel 4,277 1
    • 1 $0.26
    • 10 $0.169
    • 100 $0.26
    • 1000 $0.07487
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    HN1D03FU,LF Reel 3,000 3,000
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    Avnet Americas HN1D03FU,LF Reel 20 Weeks 3,000
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    • 10000 $0.04917
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    Mouser Electronics HN1D03FU,LF 2,553
    • 1 $0.26
    • 10 $0.169
    • 100 $0.077
    • 1000 $0.069
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    Toshiba America Electronic Components HN1D03FU,LF(T

    Switching Diode, 1.2V, 2A, Sot-363 Rohs Compliant: Yes |Toshiba HN1D03FU, LF(T
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    Newark HN1D03FU,LF(T Cut Tape 3,000 5
    • 1 $0.341
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    • 100 $0.124
    • 1000 $0.069
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    HN1D03FU,LF(T Reel 3,000
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    Chip One Stop HN1D03FU,LF(T Cut Tape 2,775
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    • 100 $0.0827
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    EBV Elektronik HN1D03FU,LF(T 13 Weeks 3,000
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    Toshiba America Electronic Components HN1D03FU TE85R

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    Bristol Electronics HN1D03FU TE85R 6,000
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    Toshiba America Electronic Components HN1D03F-T5LT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1D03F-T5LT 3,000
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    Find more HN1D03F price and stock on Findchips.com

    HN1D03F Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1D03F Toshiba Application Specific Diode Array Original PDF
    HN1D03F Toshiba Silicon Epitaxial Planar Type Original PDF
    HN1D03FTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6 Original PDF
    HN1D03FU Toshiba Silicon epitaxial planar type diode for ultra high speed switching application Original PDF
    HN1D03FU Toshiba DIODE Scan PDF
    HN1D03FU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 80MA US6 Original PDF
    HN1D03FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 Original PDF
    HN1D03FU(TE85L,F) Toshiba HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R Original PDF

    HN1D03F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HN1D03F

    Abstract: No abstract text available
    Text: HN1D03F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03F ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)


    Original     		HN1D03F 100mA HN1D03F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU PDF

    HN1D03F

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F HN1D03F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU PDF

    HN1D03FU

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE PDF

    HN1D03F

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F HN1D03F PDF

    HN1D03FU

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F PDF

    HN1D03FU

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU 100mA PDF

    HN1D03FU

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F PDF

    HN1D03FU

    Abstract: No abstract text available
    Text: HN1D03FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03FU ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)


    Original     		HN1D03FU HN1D03T 100mA HN1D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE HN1D03FU ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N . • U nit in mm Built in Anode Common and Cathode Common. U nit 1 • Low Forward Voltage Q l, Q2 : Vp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 2.8 - 0 . 3 . Built in Anode Common and Cathode Common. 1.6 Unit 1 + 0.2 - 0.1 □ 3 . Low Forward Voltage Q1,Q2 Vp=0.90V Typ. . Fast Reverse Recovery Time Ql,Q2


    OCR Scan     		HN1D03F 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 1.25±0.1 Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 db0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr= 1.6ns (Typ.)


    OCR Scan     		HN1D03FU N1D03FU 100UG PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1 n n 3F m m m 'm m mmr w mm • Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Built in Anode Common and Cathode Common. + 0.2 .1.6 -0.1. Unit 1 • Low Forward Voltage • Fast Reverse Recovery Time


    OCR Scan     		HN1D03F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •


    OCR Scan     		HN1D03F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage


    OCR Scan     		HN1D03FU PDF

    HN1D03FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. 2.1 db0.1 U n it 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU N1D03FU HN1D03FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm Built in Anode Common and Cathode Common. 2 .8 + 0.2 0.3 - + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •


    OCR Scan     		HN1D03F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.Ü0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU D03FU PDF