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    HN1V02H Search Results

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    Toshiba America Electronic Components HN1V02H-B(TE12L,F)

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    Bristol Electronics HN1V02H-B(TE12L,F) 87,929
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    Quest Components HN1V02H-B(TE12L,F) 1,308
    • 1 $1.515
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    • 100 $0.7575
    • 1000 $0.606
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    HN1V02H-B(TE12L,F) 1,308
    • 1 $1.515
    • 10 $1.515
    • 100 $0.7575
    • 1000 $0.606
    • 10000 $0.606
    		Buy Now

    HN1V02H Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1V02H Toshiba dual variable capacitance diode Original PDF
    HN1V02H Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: FM8; Number of Pins: 8; Application Scope: AM car radio Original PDF
    HN1V02H Unknown High Frequency Device Data Book (Japanese) Scan PDF
    HN1V02H Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN1V02H Toshiba Array of Independent Diodes Scan PDF

    HN1V02H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1V02H

    Abstract: HN1V02H
    Text: HN1V02H 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 HN1V02H ○ AM チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C8V = 19.5 標準 • 性能指数が高い。 • 1 パッケージに 2 素子を内蔵しています。


    Original     		PDF HN1V02H 1V02H HN1V02H

    HN1V02H

    Abstract: No abstract text available
    Text: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including two devices in FM8 package (flat pack mini 8 pin)


    Original     		PDF HN1V02H HN1V02H

    HN1V02H

    Abstract: No abstract text available
    Text: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including two devices in FM8 package (flat pack mini 8 pin)


    Original     		PDF HN1V02H HN1V02H

    HN1V02H

    Abstract: No abstract text available
    Text: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. · High Q: Q = 200 (min) · Including two devices in FM8 package (flat pack mini 8 pin)


    Original     		PDF HN1V02H HN1V02H

    HN1V02H

    Abstract: No abstract text available
    Text: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including two devices in FM8 package (flat pack mini 8 pin)


    Original     		PDF HN1V02H HN1V02H

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    isv149

    Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
    Text: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application


    OCR Scan     		PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239 ISV229

    Untitled

    Abstract: No abstract text available
    Text: HN1V02H SILICON EPITAXIAL PLANAR TYPE Unit in mm AM RADIO BAND TUNING APPLICATIONS , High Capacitance Ratio : ClV/C8V=19.5 Typ. . High Q : Q=200(Min.) . Including Two Devices in FM8 Package (Flat Pack Mini 8 Pin) k i + 0.1 0.15 - 0 . 0 5 : V r =1~8V K . Lou Voltage Operation


    OCR Scan     		PDF HN1V02H 10flA

    HN1V02H

    Abstract: No abstract text available
    Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V


    OCR Scan     		PDF HN1V02H HN1V02H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 02 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. M A X IM U M RATINGS Ta = 25°C (D 1# D2) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 SYMBOL VR


    OCR Scan     		PDF HN1V02H

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA HN1V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE H N1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		PDF HN1V02H

    Untitled

    Abstract: No abstract text available
    Text: HN1V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		PDF HN1V02H

    HN1V02H

    Abstract: 1V02
    Text: TO SH IBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V


    OCR Scan     		PDF HN1V02H HN1V02H 1V02

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE TRANSISTOR HN1V02H U nit in mm TÔT A M R A D IO B A N D T U N IN G A PP LIC A T IO N S . 45-02 • • • High Capacitance Ratio : CIV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		PDF HN1V02H

    Untitled

    Abstract: No abstract text available
    Text: HN1V02H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		PDF HN1V02H

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC1815 2SA1015

    Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
    Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161


    OCR Scan     		PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1815