HN2C12FU
Abstract: No abstract text available
Text: TOSHIBA HN2C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN2C12FU
HN2C12
HN2C12FU
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H123
Abstract: HN2C12FU
Text: TOSHIBA HN2C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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HN2C12FU
HN2C12
H123
HN2C12FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C12FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri7Fll • ■ u 'm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL
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HN2C12FU
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HN2C12FU
Abstract: H123
Text: TO SH IBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN2C12FU
N2C12
HN2C12FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C12FU
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