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    Toshiba America Electronic Components HN4K03JUTE85LF

    MOSFET N-CH 20V 100MA USV
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    HN4K03JU Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN4K03JU Toshiba dual N channel MosFet Original PDF
    HN4K03JU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: USV; XJE016 JEITA: SC-88A; Number of Pins: 5; Internal connection: Source-Common; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max 10); I_D Q1, max (mA): (max 100) Original PDF
    HN4K03JU Toshiba N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) Scan PDF
    HN4K03JUTE85LF Toshiba FETs - Single, Discrete Semiconductor Products, MOSF N CH 20V 100MA USV Original PDF

    HN4K03JU Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Absolute Maximum Ratings Ta = 25°C (Q1, Q2 Common)


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    PDF HN4K03JU

    Untitled

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit: mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5 to 1.5V z Excellent switching times z Small package


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    PDF HN4K03JU

    HN4K03JU

    Abstract: No abstract text available
    Text: HN4K03JU 東芝電界効果トランジスタ シリコンNチャネルMOS形 HN4K03JU ○ 高速スイッチング用 ○ アナログスイッチング用 単位: mm z 入力インピーダンスが高く駆動電流が極めて小さい。 z Vth が低く、低電圧での CMOS などからの直接駆動が可能。


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    PDF HN4K03JU HN4K03JU

    Untitled

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Maximum Ratings Ta = 25°°C (Q1, Q2 Common)


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    PDF HN4K03JU 000707EAA1

    HN4K03JU

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5~1.5V z Excellent switching times z Small package


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    PDF HN4K03JU HN4K03JU

    HN4K03JU

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications z High input impedance z Low gate threshold voltage: Vth = 0.5~1.5V z Excellent switching times z Small package


    Original
    PDF HN4K03JU HN4K03JU

    Untitled

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Maximum Ratings Ta = 25°C (Q1, Q2 Common)


    Original
    PDF HN4K03JU

    HN4K03JU

    Abstract: No abstract text available
    Text: HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU High Speed Switching Applications Analog Switch Applications Unit in mm l High input impedance l Low gate threshold voltage: Vth = 0.5~1.5V l Excellent switching times l Small package


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    PDF HN4K03JU 000707EAA1 HN4K03JU

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


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    PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


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    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


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    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


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    PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package


    OCR Scan
    PDF HN4K03JU

    HN4K03JU

    Abstract: S-25
    Text: TOSHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package


    OCR Scan
    PDF HN4K03JU 961001EAA1 HN4K03JU S-25

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N d K n 3 I II • ■ m 'm m m% w v v HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS • High Input Impedance. • Low Gâte Threshold Voltage : • Excellent Switching Times


    OCR Scan
    PDF HN4K03JU