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    HSG2002 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    HSG2002 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation

    HSG2002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30S124

    Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
    Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage


    Original
    HSG2002 REJ03G0444-0300 PWQN0008ZA-A 30S124 KA 1046 Y 839 marking code 576 zo 103 ma A 1757 PDF

    KA 1046 Y 839

    Abstract: KA 1046 Y 840
    Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage


    Original
    HSG2002 REJ03G0444-0300 PWQN0008ZA-A KA 1046 Y 839 KA 1046 Y 840 PDF

    WQFN0202-8V

    Abstract: No abstract text available
    Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage


    Original
    HSG2002 REJ03G0444-0100 WQFN0202-8V vo-900 Unit2607 WQFN0202-8V PDF

    RQG2003

    Abstract: SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
    Text: Renesas Technology Releases SiGe Power Transistor Achieving Industry’s Highest Performance Level for Power Amplifier Use in Wireless LAN Terminals, etc.  Offering 2.4 GHz/5 GHz dual-band compatibility and allowing implementation of low-power-consumption products 


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    RQG2003 HSG2002, tranRQG2003 WQFN0202 SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF