HVC359 Search Results

Contextual Info: HVC359 Variable Capacitance Diode for VCXO HITACHI Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package UFP is suitable for surface mount design. Ordering Information Type No. Laser Mark

HVC359

Abstract: 208419A DSA003642
Contextual Info: HVC359 Variable Capacitance Diode for VCXO ADE-208-419A Z Rev. 0 Dec. 1998 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

hvc359 spice

Abstract: Hitachi DSAUTAZ005
Contextual Info: HVC359 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC359 ZDV D +EG=1.1100E+00 +CJO=8.7500E-11 +TT=5.1390E-06 +CJO2=1.3012E-10 +COFF=2.0000E-12 +IS=1.6700E-15 +PB=7.6000E-01 +BV=1.5000E+01 +M2=1.8310E+00

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

Hitachi DSA002719

Contextual Info: HVC359 Variable Capacitance Diode for VCXO ADE-208-419D Z Rev. 1 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No.

HVC359

Abstract: Hitachi DSA0047
Contextual Info: HVC359 Variable Capacitance Diode for VCO ADE-208-419B Z Rev.2 Apr. 2002 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

Contextual Info: HVC359 Variable Capacitance Diode for VCO REJ03G0489-0300 Previous: ADE-208-419B Rev.3.00 Jan 17, 2005 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

Contextual Info: LESHAN RADIO COMPANY, LTD. Variable Capacitance Diode for VCXO HVC359 FEATURES 1 • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package UFP is suitable for surface mount design. 2 SOD– 523 1 CATHODE

ADE-208-419

Contextual Info: HITACHI ADE-208-419 Z HVC359 Variable Capacitance capacitan Diode forVCXO HITACHI Features Rev. 0 Nov. 1995 Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • JJhra small Flat Package (UFP) is suitable for surface mount design.

HVC359

Contextual Info: HVC359 Variable Capacitance Diode for VCXO ADE-208-419A Z Rev 0 Dec. 1998 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

HVC359

Contextual Info: HVC359 Variable Capacitance Diode for VCO REJ03G0489-0300 Previous: ADE-208-419B Rev.3.00 Jan 17, 2005 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

Hitachi DSA00774

Abstract: HVC359 HVC365 ADE-208-419
Contextual Info: ADE-208-419 Z HVC359 Variable Capacitance Diode for VCXO Rev. 0 Nov. 1995 Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark

Contextual Info: HVC359-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small B at Package UFP is suitable for surface mount design. Cathode mark ( Mark 1 1C 1- - - _

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

HVC359

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

HVC359

Abstract: ADE-208-419
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,