HVD400C
Abstract: No abstract text available
Text: HVD400C Variable Capacitance Diode for VCO REJ03G0220-0100Z Rev.1.00 Apr 22, 2004 Features • High capacitance ratio. n = 1.60 min • Low series resistance. (rs = 0.70 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information
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HVD400C
REJ03G0220-0100Z
HVD400C
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HVD400C
Abstract: PUSF0002ZB-A
Text: HVD400C Variable Capacitance Diode for VCO REJ03G0220-0200 Rev.2.00 Mar 30, 2006 Features • High capacitance ratio. n = 1.60 min • Low series resistance. (rs = 0.70 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.
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HVD400C
REJ03G0220-0200
PUSF0002ZB-A
HVD400C
PUSF0002ZB-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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HVD400C
Abstract: PUSF0002ZB-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nana
Abstract: HVC12 HVC15 HVC20 HVC25 HVD08 HVD10 HVD12 HVD25 HVD30
Text: INTERNATIO NAL SEM ICOND M IE ]> • C1 0 G 0 3 7 Ô 0000014 160 B lIS E r i . HIGH VOLTAGE RECTIFIER ASSEMBLIES 25 mA High Voltage Silicon Rectifiers r IS Part Number HVD08 HVD10 HVD12 HVD1S HVD20 HVD25 HVD30 HVD35 \^HVD40 Peak Reverse Voltage PRV volts)
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iDDa376
HVD08
HVC06
HVD10
HVD12
HVC12
nana
HVC15
HVC20
HVC25
HVD25
HVD30
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL SEMICOND MIE ]> • C10G037Ô 0000014 160 BlISEri . HIGH VOLTAGE RECTIFIER ASSEMBLIES 25 mA High Voltage Silicon Rectifiers r IS Part Number HVD08 HVD10 HVD12 HVD1S HVD20 HVD25 HVD30 HVD35 \^HVD40 Peak Reverse Voltage PRV volts) 8,000 10,000
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10G037Ã
HVD08
HVD10
HVD12
HVD20
HVD25
HVD30
HVD35
HVD40
DO-201
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Untitled
Abstract: No abstract text available
Text: 'T = & '3 ~ Q < f ' INTERNATIONAL SEMICOND 4=JE D • T0DD37fl O O O O O T D flTfl B I S E M In te rn a tio n a l S em iconductor, In c HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS • SM ALL SIZE M O LD ED PACKAGE • P R V 8,000 TO 40,000 VOLTS • FAST R EC O VERY SERIES
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T0DD37fl
HVD08
HVD10
HVD12
HVD15
HVD20
HVD25
HVD30
HVD35
HVD40
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HVD08
Abstract: HVD10 HVD12 HVD20 HVD25 HVD30 HVD35 HVD40
Text: I n ter n a tio n a l HVD Series S e m ic o n d u c to r , I n c . 25 mA High Voltage Silicon Rectifiers FEATURES: Diffused Silicon Junctions P olarity Glass Passivated Junctions Avalanche Characteristics Matched Reverse Parameters Low Reverse Leakage Epoxy Encapsulated
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HVD08
HVD10
HVD12
HVD20
HVD25
HVD30
HVD35
HVD40
clDDD37fl
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