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    Untitled

    Abstract: No abstract text available
    Text: HY1N60D / HY1N60M 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger


    Original     		PDF HY1N60D HY1N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY1N60D 1N60D

    1N60M

    Abstract: No abstract text available
    Text: HY1N60D / HY1N60M 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger


    Original     		PDF HY1N60D HY1N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY1N60D 1N60D 1N60M