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    HY29F040 Price and Stock

    SK Hynix Inc HY29F040AC-90

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    Bristol Electronics HY29F040AC-90 1,345
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    HY29F040AC-90 438
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    Quest Components HY29F040AC-90 800
    • 1 $4.953
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    • 1000 $2.4765
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    HY29F040AC-90 58
    • 1 $4.95
    • 10 $2.475
    • 100 $2.475
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    HY29F040AC-90 32
    • 1 $4.95
    • 10 $3.63
    • 100 $3.3
    • 1000 $3.3
    • 10000 $3.3
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    SK Hynix Inc HY29F040AC-90R

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    Bristol Electronics HY29F040AC-90R 1,345
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    SK Hynix Inc HY29F040AC-70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY29F040AC-70 129
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    Quest Components HY29F040AC-70 39
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
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    hyn HY29F040AC70

    4 MEGABIT (512K X 8), 5 VOLT-ONLY, FLASH MEMORY Flash, 512KX8, 70ns, PQCC32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY29F040AC70 376
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    HY29F040 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY29F040 Hynix Semiconductor IC,EEPROM,NOR FLASH,512K x 8,CMOS,DIP,32PIN,PLASTIC Scan PDF
    HY29F040A Hynix Semiconductor 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory Original PDF
    HY29F040A Hyundai 4 Megabit (512K x 8), 5 Volt-only, Flash Memory Original PDF
    HY29F040AC-12 Hynix Semiconductor 4 megabit (512K x 8), 5 volt-only, flash memory, 120ns Original PDF
    HY29F040AC-12 Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns Original PDF
    HY29F040AC-12E Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns Original PDF
    HY29F040AC-12I Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns Original PDF
    HY29F040AC-15 Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns Original PDF
    HY29F040AC-15E Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns Original PDF
    HY29F040AC-15I Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns Original PDF
    HY29F040AC-55 Hynix Semiconductor 4 megabit (512K x 8), 5 volt-only, flash memory, 55ns Original PDF
    HY29F040AC-55 Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns Original PDF
    HY29F040AC-55E Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns Original PDF
    HY29F040AC-55I Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns Original PDF
    HY29F040AC-70 Hynix Semiconductor 4 megabit (512K x 8), 5 volt-only, flash memory, 70ns Original PDF
    HY29F040AC-70 Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns Original PDF
    HY29F040AC-70E Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns Original PDF
    HY29F040AC-70I Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns Original PDF
    HY29F040AC-90 Hynix Semiconductor 4 megabit (512K x 8), 5 volt-only, flash memory, 90ns Original PDF
    HY29F040AC-90 Hyundai 512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 90ns Original PDF

    HY29F040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P55i

    Abstract: HY29F040A P12-I
    Text: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands


    Original     		PDF HY29F040A P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E, R-90E 120ns P55i P12-I

    Untitled

    Abstract: No abstract text available
    Text: HY29F040 Series 512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 90 ns access time • Low Power Consumption - 20 mA typical active read current


    Original     		PDF HY29F040 32-Pin P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E,

    Hynix Semiconductor America

    Abstract: No abstract text available
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F040A Hynix Semiconductor America

    Untitled

    Abstract: No abstract text available
    Text: HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 120 ns access time · Compatible with JEDEC-Standard Commands


    Original     		PDF HY29F040 32-Pin 120ns P-12I, T-12I, R-12I P-12E, T-12E, R-12E

    Untitled

    Abstract: No abstract text available
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F040A r-61400755 S-128

    29F040A

    Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F040A S-128 29F040A hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT

    hyundai HY29F040A

    Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F040A S-128 hyundai HY29F040A 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    755IA5

    Abstract: synaptics SiS648FX OZ711M1 mPGA478b front panel SIS963 Touch pad synaptics ALC650 8259A-compatible synaptics touch pad
    Text: Chapter 1 General System Description UNIWILL COMPUTER CORP. No. 24 Pei Yuan Road Chung Li Industrial Park, Chung Li City Tao Yuan, Taiwan, R.O.C. TEL: 886-3-461-6000 FAX: 886-3-461-6317 URL: http:// www.uniwill.com.tw/ 755IA5 Rev : A Page 1 - 15 Chapter 1


    Original     		PDF 755IA5 512-KB 478-pin 755IA5 synaptics SiS648FX OZ711M1 mPGA478b front panel SIS963 Touch pad synaptics ALC650 8259A-compatible synaptics touch pad

    intel 27c512 eprom

    Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
    Text: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.


    Original     		PDF 32-pin 9x/2000/XP MX29F040 PM29F004B PM29LV004T PM29F004T PM29LV002B SST39SF010A SST39LF010 SST39VF020 intel 27c512 eprom W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512

    M5m27c201j

    Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
    Text: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base


    Original     		PDF Am27C010- Am27C010-J Am29F010B-J Am29LV010B-J Am27C020-J Am29F002B-J Am29F002T-J Am27C040-J Am27H010 M5m27c201j 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


    Original     		PDF GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F040 120ns P-121, T-121, R-121 P-12E, T-12E, R-12E P-151,

    Untitled

    Abstract: No abstract text available
    Text: “H Y• U NDAI 1» 11 1 * * 1 1 512K x 8 . b jt CM 0S Series 5 0 v .HY29F040 0 n |y S e c t o r E ra s e F |a s h M e m 0 ry PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1


    OCR Scan     		PDF HY29F040 1FA02-01-MAY95

    Untitled

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y 2 9 F 0 4 0 S e r i e s ” 1 W 11 11 * 1 1 512K X 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1


    OCR Scan     		PDF HY29F040 0G0b407 1FA02-01-MAY95

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also


    OCR Scan     		PDF HY29F040 1FA02-11-MAY

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V * 10% Read, Program, and Erase - • • • Uses software commands, pinouts, and packages following industry standards for single power supply Flash memory


    OCR Scan     		PDF HY29F040A R-551 P-55E, T-55E, R-55E P-701, C-701, T-701, R-701 P-70E,

    C55E

    Abstract: C70E P55i
    Text: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Compatible with JEDEC-Standard Comm ands


    OCR Scan     		PDF HY29F040A 32-Pin 512Kx8-Bit) C55E C70E P55i

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands


    OCR Scan     		PDF HY29F040 32-Pin P-121, T-121, R-121 P-12E,

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands


    OCR Scan     		PDF HY29F040 32-Pin HY29F040 120ns P-121, T-121, R-121 P-12E,

    C551

    Abstract: HY29F040A P55i
    Text: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands


    OCR Scan     		PDF HY29F040A 32-Pin HY29F040A C551 P55i

    48pin TSOP

    Abstract: 48pin HY29F400TT HY29F200B HY29F200
    Text: •HYUNDAI QUICK REFERENCE GUIDE Flash Memory Quick Refrerence ORGANIZATION 2M bit 256KX8 (256Kx8/128Kx16) 4M bit (512Kx8) (512Kx8/256Kx16) 8M bit (1 Mx8) 98 Flash DATA BOOK PART NUMBER SPEED(ns) FEATURES PACKAGE HY29F002TT HY29F002TR HY29F002BT HY29F002BR


    OCR Scan     		PDF 256KX8) HY29F002TT HY29F002TR HY29F002BT HY29F002BR HY29F002TP HY29F002BP HY29F002TC HY29F002BC HY29F200TT 48pin TSOP 48pin HY29F400TT HY29F200B HY29F200

    P55i

    Abstract: No abstract text available
    Text: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and


    OCR Scan     		PDF HY29F002 32-Pin HY29F002 P55i