Untitled
Abstract: No abstract text available
Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY5117100A
HY5117100A
HY5117100Ato
tRASI13)
1RP02)
1AD20-10-MAY94
HY51171OOA
HY5117100AJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
|
OCR Scan
|
HYM581610
HY5117100
22//F
HYM581610M/LM/TM/LTM
350fB
891MAX.
08ffi
HYM581610TM/LTM
361MAX.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
HY5117100
1AD04-10-APR93
HY5117100JC
HY5117100UC
HY5117100TC
HY5117100LTC
HY5117100RC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM591610 Series »HYUNDAI SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting ol nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
HYM59161OM/LM/TM/LTM
HYM591610M/LM
HYM591610TM/LTM
1BDO4-O0-MAY93
HYM591610M
|
PDF
|
D0200
Abstract: No abstract text available
Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
|
OCR Scan
|
HYM581610
HY5117100
HYM581610M/LM/TM/LTM
HYM581610TM/LTM
251MAX.
1BD02-00-MA
HYM581610M
HYM581610LM
HYM581610TM
D0200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
22//F
HYM59161OM/LM/TM/LTM
03IMIN.
HYM591610TM/LTM
781MIN.
031MIN.
1BD04-11-MAR94
|
PDF
|
jc 216 sc
Abstract: 1MX1
Text: HY5117100 Series •HYUNDAI 16Mx 1-bit C M O S DRAM DESCRIPTION The H Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
HY5117100
Y5117100
1AD04-20-MAR94
HY5117100JC
Y5117100U
HY5117100TC
HY5117100LTC
jc 216 sc
1MX1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 7 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5117100 utilizes Hyundai’s CMOSsilicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
HY5117100
1AD04-20-MAR94
HY5117100JC
HY5117100UC
HY5117100TC
HY5117100LTC
HY5117100RC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ♦HYUNDAI HY5117100 Series SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5117100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
HY5117100
4-10-A
HY5117100JC
HY5117100UC
HY5117100TC
HY5117100LTC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y 5 1 1 7 1 0 0 A S e r ie s 16MX 1-bit CMOS DRAM DESCRIPTION The HY5117100Aisthe new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY5117100Aisthe
HY5117100A
HV5117100Ato
1AD20-10-MAY94
HY51171OOA
1A020-10-MAYM
HY5117100AJ
HY5117100ASLJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
HYM591610M/LM/TM/LTM
HYM591610M/LM
HYMS91610TM/LTM
1BD04-00-MAY93
HYM591610M
HYM591610LM
HYM591610TM
|
PDF
|
1BD02-00-MAY93
Abstract: No abstract text available
Text: • H Y U N D A I SEMICONDUCTOR HYM 581610 S e rie s 16M X 8-bit CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5117100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
|
OCR Scan
|
HYM581610
HY5117100
HYM58161OM/LM/TM/LTM
HYM581610M/LM
HYJM581610TM/LTM
1BD02-00-MAY93
HYM581610M
HYM581610LM
1BD02-00-MAY93
|
PDF
|
r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
|
OCR Scan
|
256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
|
PDF
|
HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
|
OCR Scan
|
256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
|
PDF
|