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    Z38B

    Abstract: 0D51 D27ID ITD014
    Text: ’H Y U N D A I HY52V255B Series _ 3 2 K w B - b l t CM 0 5 5 RAM PRELIMINARY DESCRIPTION The HYB2V256B is ahigh-spsed, low power and 32,758 x B-bits CMOS static RAM fabricated using Hyundai's high pBrformancB twin lub CMOS prnCBss technology. The HY52V256B has a data retention modB that guarantees


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    PDF HY52V255B HYB2V256B HY52V256B 55/70/B5/1 -100/120/150/200ns po319IB D27ID 1DCD6-11-MAYB4 HY62V255B Z38B 0D51 ITD014

    35XL

    Abstract: No abstract text available
    Text: •HYUNDAI ORDERING INFORMATION SRAM HY XX X X XX JOM X m HYUNDAI HY : Memory Products XX- IN X TEMR BLANK Q - 70" C - 4 0 - B5'C I PRODUCT GROUP 52 : Slow SRAM* 63 : Fast SHAM 57 : Sync. SHAM POWER SUPPLY :5.0V BLANK : 3.3V/3.DV V PROCESS : CM OS BLANK B


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    PDF 100ns 12Dns 150ns HY511BA. HY6264A, HYB2256A, HYB2256A-I, 35XL