battary backup circuit
Abstract: No abstract text available
Text: H Y 5316 1 DDA •HYUNDAI 54K N 1 B-blt CMOS FAST SRAM ADVANCED INFORMATION DESCRIPTION HY531B100A Is a high-spBsd 55,536* 15-bils CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS proDBss technology. This high reliability process coupled with high-spæd circuit dBsign lechniqUBS, yÌBlds maximum accBss lima Df 15ns. The HY531B1D0Ahas a data retsntion mede that guarantees data to
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HY531B100A
15-bils
HY531B1D0Ahas
15/17/20/25ns
AD-A15
-11-M
battary backup circuit
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