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    Untitled

    Abstract: No abstract text available
    Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of


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    PDF HY57V28420A HY57V28420A 728bit 608x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.


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    PDF HY57V28420A 120mA 110mA 100mA. 240mA 220mA. 100mA HY57V28420A

    HY57V28420AT-H

    Abstract: No abstract text available
    Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.


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    PDF HY57V28420A HY57V28420A 728bit 608x4. 400mil 54pin HY57V28420AT-H

    HY57V28420AT-H

    Abstract: 8MX4
    Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.


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    PDF HY57V28420A HY57V28420A 728bit 608x4. 400mil 54pin HY57V28420AT-H 8MX4

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of


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    PDF HY57V28420HC 728bit 608x4. 400mil 54pin

    HY57V28420HCT-S

    Abstract: hy57v28420hct-h
    Text: HY57V28420HC L T 0.1 : Hynix Change 0.2 : Burst Mode Sigle Write Mode Correction Rev. 0.2/Aug. 01 1 HY57V28420HC(L)T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory


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    PDF HY57V28420HC 728bit 608x4. 400mil 54pin HY57V28420HCT-S hy57v28420hct-h

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420HD L T 4Banks x 8M x 4bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of


    Original
    PDF HY57V28420HD 728bit 608x4. 400mil 54pin

    HY57V28420HCT-S

    Abstract: No abstract text available
    Text: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of


    Original
    PDF HY57V28420HC 728bit 608x4. 400mil 54pin HY57V28420HCT-S

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


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    PDF HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420A L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.


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    PDF HY57V28420A 32Mx4-bit, 728bit 608x4. 400mil

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


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    PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420HD L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of


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    PDF HY57V28420HD 32Mx4-bit, 728bit 608x4. 400mil

    Untitled

    Abstract: No abstract text available
    Text: HY57V28420HC L T 32Mx4-bit, 4 K Ref, 4 B an ks„ 3.3V D E S C R IP T IO N The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of


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    PDF HY57V28420HC 32Mx4-bit, 728bit 608x4, 400mil

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


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    PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201