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    I2132 Search Results

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    Dremel TI2132

    5/64" TITANIUM SP JOBBER DRILL B
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    DigiKey TI2132 Bulk 2
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    Dremel TI2132IM

    5/64" IMPACT TITANIUM DRILL BIT
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    DigiKey TI2132IM Bulk 1
    • 1 $3.19
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    Microchip Technology Inc DSC1121CI2-132.0000

    MEMS OSC XO 132.0000MHZ CMOS SMD
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    DigiKey DSC1121CI2-132.0000 1
    • 1 $1.18
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    Mouser Electronics DSC1121CI2-132.0000
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    Microchip Technology Inc DSC1121CI2-132.0000 Tube 16,310 4 Weeks
    • 1 $1.01
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    NAC DSC1121CI2-132.0000 1
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    Microchip Technology Inc DSC1121CI2-132.0000T

    MEMS OSC XO 132.0000MHZ CMOS SMD
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    DigiKey DSC1121CI2-132.0000T 1
    • 1 $1.18
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    Microchip Technology Inc DSC1121CI2-132.0000T Reel 16,310 4 Weeks
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    ifm efector inc LI2132

    Binary oil level sensor; PNP/NPN; switching signal; IO-Link; Probe length 273 mm
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    RS LI2132 Bulk 3 Weeks 1
    • 1 $312.67
    • 10 $287.65
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    I2132 Datasheets Context Search

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    OZ 9936

    Contextual Info: Preliminary Data Sheet I2132 rev. B 03/99 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase


    Original     		I2132 OZ 9936 PDF

    OZ 9936

    Abstract: 322 smd code thyristor SCR 600V 8A igt 50 8TWS04S 8TWS06S 8TWS08S AN-994 44 SMD dpak
    Contextual Info: Preliminary Data Sheet I2132 rev. C 10/99 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase


    Original     		I2132 OZ 9936 322 smd code thyristor SCR 600V 8A igt 50 8TWS04S 8TWS06S 8TWS08S AN-994 44 SMD dpak PDF

    thyristor SCR 600V 8A

    Abstract: Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994
    Contextual Info: Preliminary Data Sheet I2132 11/97 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase


    Original     		I2132 O-252AA thyristor SCR 600V 8A Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994 PDF

    Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38 1 C2 *36+436,61234286544 (-./606( 1-6234606&56,61-676065 8819365:35*3 " F3D3511;4C3 " 5;D326%*4*6$<=;13*' " ?C93*2932


    Original     		23456784539A6BCDEF 345674F 976BCDEF CD328' 36B1322 268CD63E C936B 8CD63E606 5356G1324 2368CD63E PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE


    OCR Scan     		TIM1213-2 I213-2 PDF

    Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 C2 *36+436,61234286544 (-./606( 1-623460656,61-67606!5 8819365:35*3 ! F3D3511;4C3 ! 5;D326%*4*6$<=;13*' ! ?C93*2932


    Original     		23456784539A6BCDEF 345674F 976BCDEF CD328' 36B1322 268CD63E C936B 8CD63E606 5356G1324 2368CD63E PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$62332364C3


    Original     		DD800S33K2C 03265F 1231423567896AB2C3D6EF32 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33KL2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32E5E36$1E3F132214FFF% 2313EE361346233236B4%3


    Original     		DD400S33KL2C 13265E PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET T IM 1213-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G-icb = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		10T7BS0 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F36%1F&3D132214DDDC 2313FF3613462332364C3


    Original     		DD200S33K2C 13265F PDF