Untitled
Abstract: No abstract text available
Text: IBM11D1360E1M 10/10, 5.0V, Sn/PbMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001021620. IBM11E1360E1M x 36 QC10/10, IBM11E2360E2M 5.0V, AuMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Au MMDS25DSU-001021620. IBM11D2360E2M x 36 QC IBM11D1360E IBM11D2360E
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Sn/PbMMDS25DSU-001021620.
IBM11E1360E1M
QC10/10,
AuMMDS25DSU-001021620.
IBM11D1360E1M
IBM11E2360E2M
MMDS25DSU-001021620.
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32MB SIMM
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D4360B
IBM11D8360B
IBM11E4360B
IBM11E8360B
72-Pin
32MB SIMM
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4346-01
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1365E
IBM11D2365E
72-Pin
104ns
124ns
4346-01
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Untitled
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1360Q
IBM11D2360Q
IBM11E1360Q
IBM11E2360Q
72-Pin
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Untitled
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360E IBM11D2360E IBM11E1360E IBM11E2360E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1360E
IBM11D2360E
IBM11E1360E
IBM11E2360E
72-Pin
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8mx32 simm 72 pin
Abstract: 32MB SIMM
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • High Performance CMOS process • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D4360B
IBM11D8360B
IBM11E4360B
IBM11E8360B
72-Pin
8mx32 simm 72 pin
32MB SIMM
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64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s
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2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P
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IBM0116160
IBM0116160B
IBM0116160M
IBM0116160P
IBM0116165
IBM0116165B
IBM0116165M
IBM0116165P
IBM0116400
IBM0116400B
2m x 32 SRAM SIMM
IBM11M4735CB
SIMM 72
IBM0116400M
IBM038329P
IBM025161L
dimm 168
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D2320B
Abstract: No abstract text available
Text: IBM11D2360EA IBM11E2360EA 2M x 36 DRAM Module Features • 72 -P in S ing le-In -L ine M em o ry M odule • Perform ance: -60 -70 W c RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns ÏAA Access Time From Address 30ns 35ns *RC Cycle Time 110ns 130ns
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IBM11D2360EA
IBM11E2360EA
110ns
130ns
64G3331
MMDS24DSU-00
64G3331
D2320B
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j
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72-Pin
110ns
130ns
IBM11D1360E
IBM11E1360E
IBM11D2360E
IBM11E2360E
SA14-4313
03H7149)
SA14-4309
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A/TDA 7977
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 18ns tAA Access Time From Address
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72-Pin
0002CPS
IBM11D2360E
IBM11E2360E
IBM11D1360E
IBM11E1360E
SA14-4313
03H7149)
SA14-4309
03H7148)
A/TDA 7977
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11E23
Abstract: No abstract text available
Text: IBM Table of Contents Alphanumeric Index. 11 General Information. 15
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IBM11D1320BB
11E23
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Untitled
Abstract: No abstract text available
Text: IB M 11 D 2360ED IB M 11 E2360E D 2M x 36 O R A M M odule P relim in ary Features • 72 -P in S in g le-ln -L in e M em o ry M odule • Perform ance: ÌRAC R A S A c ce s s T im e -7 0 70ns C A S A c ce s s T im e 15ns 20ns tAA A c ce s s T im e F ro m A ddre s s
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2360ED
E2360E
IBM11D2360ED
IBM11E2360ED
03H7149
MMDS25DSU-00
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