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    IDC73D120T6H Price and Stock

    Infineon Technologies AG IDC73D120T6HX1SA2

    Diode Silicon Carbide Schottky 5A DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IDC73D120T6HX1SA2)
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    Avnet Americas IDC73D120T6HX1SA2 Waffle Pack 1,683
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    EBV Elektronik IDC73D120T6HX1SA2 2 Weeks 1
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    IDC73D120T6H Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDC73D120T6H Infineon Technologies Chip Diodes; Package: --; Technology: Emitter Controlled Diode 4 High Power; VDS (max): 1,200.0 V; IF (max): 150.0 A; IF,SM (max): -; VF (typ): 1.9 V Original PDF

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    Abstract: IEC60721-3-3 IEC60721 L4926E
    Text: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC73D120T6H IDC05S120E L4926E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 IEC60721 L4926E

    IDC73D120T6H

    Abstract: L4675A
    Text: IDC73D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • medium / high power modules C Applications: • medium / high power drives


    Original     		PDF IDC73D120T6H L4675A, IDC73D120T6H L4675A