Untitled
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT61B98 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC E M O S Static RAM • High-speed address access time Th e ID T 6 1B 98 is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT's highperlom ance high-reliability B iC E M O S technology. This stateo f-th e-a rt technology, com bined with innovative circuit
|
OCR Scan
|
IDT61B98
/12/15ns
24-pin,
300-m
536-bit
IDT61B88
|
PDF
|
IDT61B98
Abstract: t61b
Text: BiCMOS STATIC RAM 64 K 1 6 K x 4-BIT IDT61B98 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC M O S S tatic RAM • H igh-speed ad dress access tim e — C om m ercia l: 8/1 0/12ns • Fast O utput Enable — C om m ercia l: 4/5/6ns
|
OCR Scan
|
IDT61B98
0/12ns
24-pin,
300mil
200mV
IDT61B98
300-m
P24-1)
t61b
|
PDF
|
98S1
Abstract: No abstract text available
Text: IDT61B98 BiCMOS STATIC RAM 64K 16Kx 4-BIT In tegrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC M O S S tatic RAM • H igh-speed ad dress access tim e — C om m ercia l: 8/10/12ns • Fast O utput Enable — C om m ercia l: 4/5 /6ns
|
OCR Scan
|
IDT61B98
8/10/12ns
24-pin,
300mil
200mV
IDT61B98
P24-1)
98S1
|
PDF
|
61B98
Abstract: IDT61B98 Jess Technology
Text: IDT61B98 BiCMOS STATIC RAM 6 4 K 1 6 K x 4-BIT Integrated D evice T ech n o lo gy, Inc. FEATURES: DESCRIPTION: • 1 6K x 4 B iC M O S S ta tic R A M • H ig h -s p e e d a d d re s s a c c e s s tim e — C o m m e rc ia l: 8 /1 0 /1 2 n s • F a s t O u tp u t E n a b le
|
OCR Scan
|
IDT61B98
8/10/12ns
24-pin,
300-mil
536-bit
200mV
STA71C
61B98
Jess Technology
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT71B98 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 BiCEMOS Static RAM • High-speed address access time — Commercial: 8/10/12ns — Military: 10/12/15ns • Fast Output Enable
|
OCR Scan
|
IDT71B98
8/10/12ns
10/12/15ns
24-pin,
300-mil
IDT71B98
536-bit
|
PDF
|
toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
|
OCR Scan
|
KM4164
KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
toshiba 32k*8 sram
M5M23C100
M5M5265
seeq DQ2816A
M5M23C400
MB832001
HITACHI 64k DRAM
TC511000
TC51464
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 16Kx 4-BIT PRELIMINARY 1DT61B98 In teg rated D e v ic e T e c h n o lo g y , In c. FEATURES: DESCRIPTION: • 16K x 4 BiCEMOS Static RAM • High-speed address access time — Commercial: 8/10/12ns — Military: 10/12/15ns • Fast Output Enable
|
OCR Scan
|
1DT61B98
8/10/12ns
10/12/15ns
24-pin,
300-mil
IDT61B98
536-bit
IDT61B98
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 16K x 4-BIT PRELIMINARY IDT71B98 Integrated Device Technology» Inc. DESCRIPTION: FEATURES: 4 BiCEMOS Static RAM High-speed address access time — Commercial: 8/10/12ns — Military: 10/12/15ns Fast Output Enable — Commercial: 5/6/7ns
|
OCR Scan
|
IDT71B98
IDT71B98
536-bit
400mW
IDT61B98
24-pin,
24-pycle,
IDT71BM
|
PDF
|
