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    IDT74ALVC10 Search Results

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    IDT74ALVC10 Price and Stock

    Rochester Electronics LLC IDT74ALVC10AMPG

    IC GATE NAND TRPL 3-INP
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    DigiKey IDT74ALVC10AMPG Bulk 1,211
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    Integrated Device Technology Inc IDT74ALVC10AMPG

    74ALVC10 - CMOS Triple 3-Input Positive-NAND Gate '
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    Rochester Electronics IDT74ALVC10AMPG 4,216 1
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    IDT74ALVC10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDT74ALVC10DC Integrated Device Technology 3.3V CMOS Triple 3-Input Positive-NAND Gate Original PDF
    IDT74ALVC10PG Integrated Device Technology 3.3V CMOS Triple 3-Input Positive-NAND Gate Original PDF
    IDT74ALVC10PY Integrated Device Technology 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE Original PDF

    IDT74ALVC10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    "NAND Gate"

    Abstract: 3 input nand gate data sheet 4634
    Text: IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE EXTENDED COMMERCIAL TEMPERATURE RANGE IDT74ALVC10 ADVANCE INFORMATION 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: This triple 3-input positive-NAND gate is built using advanced dual


    Original     		IDT74ALVC10 ALVC10 MIL-STD-883, 200pF, O14-2) SO14-3) "NAND Gate" 3 input nand gate data sheet 4634 PDF

    4634

    Abstract: IDT74ALVC10
    Text: IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: – – This triple 3-input positive-NAND gate is built using advanced dual metal CMOS technology. The ALVC10 performs the Boolean function


    Original     		IDT74ALVC10 ALVC10 MIL-STD-883, 200pF, SO14-1) SO14-2) SO14-3) 4634 IDT74ALVC10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: This triple 3-input positive-NAND gate is built using advanced dual metal CMOS technology. The ALVC10 performs the Boolean function Y = A • B


    Original     		IDT74ALVC10 IDT74ALVC10 MIL-STD-883, 200pF, PDF

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY PDF

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 PDF

    Untitled

    Abstract: No abstract text available
    Text: R IDT74ALVC10 ADVANCE INFORMATION 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NANDGATE _ irr I i D E S C R IP T IO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and


    OCR Scan     		IDT74ALVC10 MIL-STD-883, 200pF, ALVC10: PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 4 0 ° C to +85°C


    OCR Scan     		MIL-STD-883, 200pF, ALVC10 IDT74ALVC10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1.27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 40°C to +85°C


    OCR Scan     		IDT74ALVC10 MIL-STD-883, 200pF, ALVC10 PDF