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    Toshiba America Electronic Components MIG10Q805H

    SILICON N CHANNEL INTEGRATED IGBT MODULE Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA MIG10Q805H 843
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    Text: TOSHIBA IG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT


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