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    Infineon Technologies AG IGC27T120T6LX1SA3

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC27T120T6LX1SA3)
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    Avnet Americas IGC27T120T6LX1SA3 Waffle Pack 134
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    IGC27T120T6L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC27T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 25.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC27T120T6L L7643C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC27T120T6L L7643C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC27T120T6L L7643C, PDF