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    Infineon Technologies AG IGC99T120T6RHX1SA1

    Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T6RHX1SA1)
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    Avnet Americas IGC99T120T6RHX1SA1 Waffle Pack 37
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    IGC99T120T6RH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC99T120T6RH Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 100.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC99T120T6RH VCE ICn 1200V 100A This chip is used for: • medium / high power modules


    Original     		PDF IGC99T120T6RH L7683A,

    Untitled

    Abstract: No abstract text available
    Text: IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC99T120T6RH VCE ICn 1200V 100A This chip is used for: • medium / high power modules


    Original     		PDF IGC99T120T6RH 140in L7683A,

    Untitled

    Abstract: No abstract text available
    Text: IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC99T120T6RH VCE ICn 1200V 100A This chip is used for: • medium / high power modules


    Original     		PDF IGC99T120T6RH L7683