IGT4E10 Search Results

IGT4E10 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IGT4E10		General Electric	Power Transistor Data Book 1985		Scan	PDF
IGT4E10		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
IGT4E10		International Rectifier	Transistor / IGBT		Scan	PDF

IGT4E10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IBJT Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026 Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,	Original	PDF
IBJT Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but	Original	PDF	AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
transistor bt 808 Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS	Original	PDF
IBJT Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS	Original	PDF	AN9319 IBJT General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
MC 931 transistor Abstract: IGT4E10 250M IGT4D10 Text: Insulated-Gate Bipolar Transistors IGT4D10, IGT4E10 File Number 2123 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 10A, 400V and 500V rDS on = 0.27 O Features: • Low 1/c e i s a t i — 2.5V type @ 10A	OCR Scan	PDF	IGT4D10, IGT4E10 IGT4D10 IGT4E10 -60/jsec. MC 931 transistor 250M
IGT4E10 Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s	OCR Scan	PDF	0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
IGT4E10 Abstract: 4D10 VQE 22 VQE 12 IGT4D10 Text: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and	OCR Scan	PDF	IGT4D10 IGT4E10 4D10 VQE 22 VQE 12