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    IGT6E10 Search Results

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    Harris Semiconductor IGT6E10

    IGT6E10 - 10A, 500V IGBT FOR MOTOR DRIVE '
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    Rochester Electronics IGT6E10 78 1
    • 1 $2.78
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    IGT6E10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGT6E10 General Electric Power Transistor Data Book 1985 Scan PDF
    IGT6E10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IGT6E10 International Rectifier Transistor / IGBT Scan PDF

    IGT6E10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGT6E10

    Abstract: 6D10 IGT6D10 bipolar transistors Transistor ge 718
    Text: Insulated-Gate Bipolar Transistors - IGT6D10, IGT6E10 F ile N u m b e r 2125 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERM INAL DIAGRAM 10A, 400V and 500V Tds on = 0.27 fi Features: • Lo w I / cecsati — 2.5V typ. @ 10A


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    PDF IGT6D10, IGT6E10 IGT6D10 IGT6E10 6D10- 6D10 bipolar transistors Transistor ge 718

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


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    PDF 0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

    550MH

    Abstract: IGT6D10 IGT6E10
    Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device


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