IN5000S
Abstract: No abstract text available
Text: IN5000S Импульсный блок питания 5000 мА ● очень легкий и компактный ● более высокий КПД по сравнению с традиционными блоками питания ● стабилизированное напряжение
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IN5000S
IN5000S
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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PTZ2222A
Abstract: TL431ADBZ ILSCO 10U CAPACITOR 2n7002dict GRM39yyyxxxKvvvA UCC27324D Vishay-Liteon TL431AD 2N7002 Vishay-Liteon
Text: + + + + Filename: PMP2445C_bom.xls Date: 08/16/2007 PMP2445C BOM COUNT 6 4 2 1 1 1 1 1 2 2 1 2 2 1 1 2 1 1 1 4 1 4 1 2 1 1 1 1 1 1 1 2 1 1 1 1 RefDes C1, C2, C5, C9, C13, C21 C10, C12, C18, C22 C11, C14 C15 C16 C17 C19 C20 C3, C4 C6, C7 C8 D1, D2 D3, D6 D4
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PMP2445C
2200P
1000p
1000U
BAS21
MBRB2535
ED1514
PTZ2222A
PTZ2222A
TL431ADBZ
ILSCO
10U CAPACITOR
2n7002dict
GRM39yyyxxxKvvvA
UCC27324D
Vishay-Liteon
TL431AD
2N7002 Vishay-Liteon
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TAG 9135
Abstract: tag z 409 rohm 4.7V zener diode MARKING CODE t05 SOT-23 SMD CODE L01 rsz rohm marking RSZ diode rsz RSZ5000 ROHM marking 185
Text: TfliSÛR'H O O O ö T O b ROHffl PRELIMINARY RHU RSZ5000 SERIES ZENER DIODE, SURFACE MOUNT: APPLICATION: EDS • SOT-23 FEATURES: Voltage Regulation • Small size for Surface Mount Applications ■ Compatible with JEOEC IN5000 Series ■ Silicon planar construction
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RSZ5000
OT-23
IN5000
OT-23)
RSZ5262B
RSZ5263B
RSZ5264B
RSZ5265B
RSZ5266B
RSZ5267B
TAG 9135
tag z 409
rohm 4.7V zener diode
MARKING CODE t05 SOT-23
SMD CODE L01
rsz rohm
marking RSZ
diode rsz
ROHM marking 185
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1n700
Abstract: tzp 10
Text: 2Iener Diodes MTZ series lz = 20,10mA and MTZJ series (lz = 5mA) are in DO-34 package and IN5000, IN900 and IN700 serieses are in DO-35 package. MTZJ series ranges from 2.0 to 56V. ITZ series contains 8 elements in a single 9-pin package, suitable for use as 8-bit data bus line surge absorption.
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DO-34
IN5000,
IN900
IN700
DO-35
1N5000
1N900
1N700
tzp 10
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Zener diode smd marking Z7W
Abstract: z7w smd code smd z7s z7w smd diode smd code Z7N z7s smd code smd code Z7s marking z7p SMD z7w marking z7s
Text: ramm RSZ5000 SER IES Z E N E R D IO D E , SU RFA CE MOUNT: APPLICATION: SOT-23 FEATURES: Voltage Régulation • Small size for Surface Mount Applications • Compatible with J ED EC IN5000 Series • Silicon planar construction • S S T Package U.S./European SOT-23
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RSZ5000
OT-23
-65to
IN5000
OT-23)
RSZ5251B
RSZ5252B
RSZ5253B
RSZ5254B
RSZ5255B
Zener diode smd marking Z7W
z7w smd code
smd z7s
z7w smd diode
smd code Z7N
z7s smd code
smd code Z7s
marking z7p
SMD z7w
marking z7s
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diode t88
Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
Text: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation
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1N5000
IN5000
DO-35
DO-35
5261B
1N5262B
5262B
1N5263B
5263B
1N5264B
diode t88
zener diode 4.7V
1n4000 DIODE
t88 diode
T-72 diode
5261B
5230b
1N4000
1N5000 SERIES
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IN5000
Abstract: MTZ9.1 MTZ30 MTZ7.5 MTZ10 IN700 MTZ5.1 MTZ43 MTZ33 MTZ2.7
Text: Zener Diodes MTZ series lz = 20,1 OmA and MTZJ series (lz= 5 m A ) are in DO-34 package and IN5000, IN900 and IN700 serieses are in DO-35 package. MTZJ series ranges from 2.0 to 56V. ITZ series contains 8 elements in a single 9-pin package, suitable for use as 8-bit data bus line surge absorption.
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DO-34
IN5000,
IN900
IN700
DO-35
1N5000
1N900
1N700
IN5000
MTZ9.1
MTZ30
MTZ7.5
MTZ10
MTZ5.1
MTZ43
MTZ33
MTZ2.7
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Tzp 10
Abstract: 1n700 zener mtzj do34 zener series mtz
Text: Zener Diodes MTZ series Iz = 20,10mA and MTZJ series (lz=5m A ) are in DO-34 package and IN5000, IN900 and IN700 serieses are in DO-35 package. MTZJ series ranges from 2.0 to 56V. ITZ series contains 8 elements in a single 9-pin package, suitable for use as 8-bit data bus line surge absorption.
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DO-34
IN5000,
IN900
IN700
DO-35
1N900
1N700
DO-41
Tzp 10
zener mtzj do34
zener series mtz
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
PNP transistor A705
2N1620
2sc768
2N1619
UD3008
BD264
MHT6414
SOT1156
MHT6311
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet DRAWING N o . : M 8 3 - L F C 1F 1N 5 0 - 0 0 0 4 - 3 0 7 SHEET 2 OF 2 1 IF IN D OUBT - ASK | — | 2 NOT TO SCALE | THIRD ANGLE PROJECTION 1 X 2.00 SECTION I N mm X-X Y-Y CROSS S ECTION OF COAX CONTACT NOTES: 1. C O N N E C T O R S A R E S U P P L I E D WI T H C O N T A C T S L O O S E .
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83-LFCIF
IN50-0004-307
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IN4140
Abstract: IN4722 IN4001-IN4007 IN5060 IN2071 IN4385 IN5003 IN4142 IN5408 IN4720
Text: ,LION ENTERPRISES CÔRP 5ME D • SSE^Db? □□□□□05 T ■ J ~ -Q /-o t 112 AXIAL LEAD SILICON RECTIFIERS M etallurgical^ Bonded DO-41 PACKAGE .034 (.9) ■10 7(2.7) .080 (2 .0} 70281 ¡(77) 1 — o “r Case Material U /L 9 4 V -0 Rated 1.0 M IN .
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DO-41
IN4001-IN4007
IN4001
IN4002
IN4003
IN4004
IN4005
IN4006
IN4007
IN2858
IN4140
IN4722
IN4001-IN4007
IN5060
IN2071
IN4385
IN5003
IN4142
IN5408
IN4720
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Y220b
Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N3836
BD264
BD263
BD264A
NS9726
UD3008
2N3837
2N5417
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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028A5
Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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80 amp 30v npn darlington
Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
80 amp 30v npn darlington
UD3008
transistor 2sc115
bd107a
A515
B3570
B3571
BD106
HFE-10
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IN5230B
Abstract: 5246B 1n 5252b zener 5242B 1N5000 5232b 1N5248B 1N5000 SERIES
Text: 1N5000B series Diodes, Zener, 500 mW, leaded These glass-sealed Zener diodes are suitable for lead mounting on printed circuit boards. They can be used to regulate voltages between 4 and 24 V. Dimensions Units : mm CATHODE BAND <£ 0 . 5 ± 0 . I Features
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1N5000B
DO-35
IN5000B
IN5230B
5230BR.
1N5000
5246B
1n 5252b zener
5242B
5232b
1N5248B
1N5000 SERIES
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2SC736
Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2SC736
BLY25
BLY26
CP430
2N5276
TA-D93
ML101B
TAB101
NS9726
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BD264A
Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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Untitled
Abstract: No abstract text available
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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