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    IPB06CNE8N Search Results

    IPB06CNE8N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB06CNE8NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPB06CNE8N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J