IPD35N10S3L-26 Search Results
IPD35N10S3L-26 Price and Stock
Infineon Technologies AG IPD35N10S3L26ATMA1MOSFET N-CH 100V 35A TO252-31 |
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IPD35N10S3L26ATMA1 | Cut Tape | 9,552 | 1 |
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IPD35N10S3L26ATMA1 | 8,170 |
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IPD35N10S3L26ATMA1 | 5,000 | 2,500 |
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IPD35N10S3L26ATMA1 | 5,000 | 12 Weeks | 2,500 |
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IPD35N10S3L26ATMA1 | Cut Tape | 15,321 | 1 |
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IPD35N10S3L26ATMA1 | 55,326 | 1 |
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IPD35N10S3L26ATMA1 | Cut Tape | 2,435 |
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IPD35N10S3L26ATMA1 | 162,700 |
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Infineon Technologies AG IPD35N10S3L26ATMA2MOSFET_(75V 120V( |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD35N10S3L26ATMA2 | Reel | 2,500 |
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IPD35N10S3L26ATMA2 | Reel | 12 Weeks | 2,500 |
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IPD35N10S3L26ATMA2 |
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IPD35N10S3L26ATMA2 | 57,500 | 2,500 |
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IPD35N10S3L26ATMA2 | 5,567 | 1 |
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IPD35N10S3L26ATMA2 | 13 Weeks | 2,500 |
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Infineon Technologies AG IPD35N10S3L-26MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD35N10S3L-26 | 9,558 |
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IPD35N10S3L-26 | 2,500 |
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IPD35N10S3L-26 | 238 |
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IPD35N10S3L-26 | 192,500 |
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Infineon Technologies AG IPD35N10S3L26OPTIMOS-T POWER-TRANSISTOR Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD35N10S3L26 | 3,355 |
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IPD35N10S3L-26 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD35N10S3L-26 |
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Single: N-Channel 100V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; VDS (max): 100.0 V; RDS (on) (max) (@10V): 24.0 mOhm; ID (max): 35.0 A; RthJC (max): 2.1 K/W; | Original | |||
IPD35N10S3L26ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 35A TO252-3 | Original |