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    IPI086N10N3 Price and Stock

    Infineon Technologies AG IPI086N10N3GXKSA1

    MOSFET N-CH 100V 80A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI086N10N3GXKSA1 Tube 242 1
    • 1 $2.37
    • 10 $2.37
    • 100 $2.37
    • 1000 $0.76861
    • 10000 $0.69262
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    Newark IPI086N10N3GXKSA1 Bulk 1
    • 1 $2.46
    • 10 $1.78
    • 100 $1.08
    • 1000 $0.799
    • 10000 $0.72
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    TME IPI086N10N3GXKSA1 138 1
    • 1 $1.73
    • 10 $1.11
    • 100 $0.86
    • 1000 $0.65
    • 10000 $0.65
    		Buy Now
    Chip One Stop IPI086N10N3GXKSA1 Tube 699
    • 1 $1.89
    • 10 $1.38
    • 100 $0.833
    • 1000 $0.794
    • 10000 $0.794
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    EBV Elektronik IPI086N10N3GXKSA1 17 Weeks 500
    • 1 -
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    Infineon Technologies AG IPI086N10N3GXK

    Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPI086N10N3GXK Tube 16 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.55866
    • 10000 $0.54481
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    Infineon Technologies AG IPI086N10N3 G

    MOSFETs N-Ch 100V 80A I2PAK-3 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPI086N10N3 G 746
    • 1 $2.3
    • 10 $1.15
    • 100 $1.03
    • 1000 $0.712
    • 10000 $0.692
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    IPI086N10N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI086N10N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.6 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF
    IPI086N10N3GXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO262-3 Original PDF

    IPI086N10N3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    086n10n

    Abstract: 082N10N 083N10N IPD082N10N3 086N10 IEC61249-2-21 IPP086N10N3 PG-TO220-3 V6150 IPP086N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n 082N10N 083N10N 086N10 IEC61249-2-21 PG-TO220-3 V6150 IPP086N10N3 G PDF

    086n10n

    Abstract: 082N10N 083N10N 086N10 IPP086N10N3 IPD082N10N3 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 PG-TO220-3 PG-TO262-3 086n10n 082N10N 083N10N 086N10 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking PDF

    086N10N

    Abstract: 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086N10N 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G PDF

    086n10n

    Abstract: IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO 252) 8.2 mW ID 80 A • Very low on-resistance R DS(on)


    Original     		IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n IPD082N10N3 G PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF