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    Infineon Technologies AG IPP080N06N-G

    MOSFET N-CH 60V 80A TO220-3
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    DigiKey IPP080N06N-G Tube 500
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    IPP080N06N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP080N06NG Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPP080N06NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 80A TO-220 Original PDF
    IPP080N06N G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO-220 Original PDF

    IPP080N06N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC61249-2-21

    Abstract: PG-TO220-3 080N06N
    Text: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original
    PDF IPB080N06N IPP080N06N IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 080N06N IEC61249-2-21 PG-TO220-3 080N06N

    080N06N

    Abstract: d80 DIODE PG-TO220-3
    Text: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 m: 80 A • 175 °C operating temperature • Avalanche rated


    Original
    PDF IPB080N06N IPP080N06N PG-TO263-3 PG-TO220-3 080N06N 080N06N d80 DIODE PG-TO220-3

    5411C

    Abstract: da5 diode BC519 58a4
    Text: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C


    Original
    PDF IPB080N06N IPP080N06N 5411C da5 diode BC519 58a4

    PG-TO220-3

    Abstract: IPP080N06N d80 DIODE 65V8
    Text: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original
    PDF IPB080N06N IPP080N06N P-TO263-3-2 P-TO220-3-1 080N06N PG-TO220-3 d80 DIODE 65V8

    Untitled

    Abstract: No abstract text available
    Text: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature


    Original
    PDF IPB080N06N IPP080N06N P-TO263-3-2 080N06N P-TO220-3-1

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


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    PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original
    PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original
    PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP