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Infineon Technologies AG IRF1010EZPBF MOSFET N-CH 60V 75A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF1010EZPBF	Tube	7,964		1	1 $2.11 10 $2.11 100 $2.11 1000 $0.67001 10000 $0.58862	Buy Now
Avnet Americas	IRF1010EZPBF	Bulk		16 Weeks, 5 Days	1	1 $1.81 10 $1.24 100 $0.852 1000 $0.631 10000 $0.631	Buy Now
	IRF1010EZPBF	Tube		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IRF1010EZPBF		3,370			1 $1.63 10 $0.93 100 $0.843 1000 $0.635 10000 $0.588	Buy Now
Verical	IRF1010EZPBF		12,000		1,000	1 - 10 - 100 - 1000 $0.6318 10000 $0.6318	Buy Now
	IRF1010EZPBF		10,600		17	1 - 10 - 100 $0.7633 1000 $0.5577 10000 $0.5577	Buy Now
	IRF1010EZPBF		2,980		488	1 - 10 - 100 - 1000 $0.6949 10000 $0.6949	Buy Now
	IRF1010EZPBF		938		27	1 - 10 - 100 $0.8163 1000 $0.7388 10000 $0.7388	Buy Now
	IRF1010EZPBF		866		488	1 - 10 - 100 - 1000 $0.7358 10000 $0.7358	Buy Now
Arrow Electronics	IRF1010EZPBF		10,600	12 Weeks	1	1 $1.6637 10 $1.003 100 $0.7591 1000 $0.5546 10000 $0.5546	Buy Now

Newark	IRF1010EZPBF	Bulk	2,872		1	1 $1.78 10 $1.31 100 $0.85 1000 $0.641 10000 $0.612	Buy Now
RS	IRF1010EZPBF	Bulk			1	1 $1.26 10 $1.2 100 $1.07 1000 $1.07 10000 $1.07	Get Quote
Rochester Electronics	IRF1010EZPBF		3,864		1	1 $0.654 10 $0.654 100 $0.6148 1000 $0.5559 10000 $0.5559	Buy Now
TME	IRF1010EZPBF		87		1	1 $1.487 10 $0.938 100 $0.735 1000 $0.583 10000 $0.493	Buy Now
EBV Elektronik	IRF1010EZPBF			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRF1010ESTRLPBF MOSFET N-CH 60V 84A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF1010ESTRLPBF	Digi-Reel	2,674		1	1 $2.35 10 $1.509 100 $2.35 1000 $2.35 10000 $2.35	Buy Now
	IRF1010ESTRLPBF	Cut Tape	2,674		1	1 $2.35 10 $1.509 100 $2.35 1000 $2.35 10000 $2.35	Buy Now
	IRF1010ESTRLPBF	Reel	1,600		800	1 - 10 - 100 - 1000 $0.77931 10000 $0.68275	Buy Now
Avnet Americas	IRF1010ESTRLPBF	Reel		10 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IRF1010ESTRLPBF		757			1 $1.68 10 $1.21 100 $0.933 1000 $0.699 10000 $0.682	Buy Now
Verical	IRF1010ESTRLPBF		16,800		800	1 - 10 - 100 - 1000 $0.6882 10000 $0.6882	Buy Now
Arrow Electronics	IRF1010ESTRLPBF		16,800	10 Weeks	800	1 - 10 - 100 - 1000 $0.6844 10000 $0.6844	Buy Now

Newark	IRF1010ESTRLPBF	Cut Tape	186		1	1 $1.59 10 $1.37 100 $1.15 1000 $1.14 10000 $0.911	Buy Now
TME	IRF1010ESTRLPBF		599		1	1 $1.32 10 $1.16 100 $0.92 1000 $0.74 10000 $0.66	Buy Now
EBV Elektronik	IRF1010ESTRLPBF			11 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRF1010EL MOSFET N-CH 60V 84A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF1010EL	Tube			50	1 - 10 - 100 $2.7906 1000 $2.7906 10000 $2.7906	Buy Now
Infineon Technologies AG IRF1010EZL MOSFET N-CH 60V 75A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF1010EZL	Tube			50	1 - 10 - 100 $2.0238 1000 $2.0238 10000 $2.0238	Buy Now
Infineon Technologies AG IRF1010EZS MOSFET N-CH 60V 75A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF1010EZS	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRF1010E Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF1010E	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging	Original	PDF
IRF1010E	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRF1010E	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRF1010E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF1010E	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB	Scan	PDF
IRF1010EL	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging	Original	PDF
IRF1010EL	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRF1010EL	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRF1010EL	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF1010ELPBF	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging	Original	PDF
IRF1010ELPBF	International Rectifier	TRANS MOSFET N-CH 60V 84A 3TO-262	Original	PDF
IRF1010EPBF	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging.	Original	PDF
IRF1010EPBF	International Rectifier	TRANS MOSFET N-CH 60V 84A 3TO-220AB	Original	PDF
IRF1010ES	International Rectifier	HEXFET Power Mosfet	Original	PDF

IRF1010ES	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRF1010ES	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging	Original	PDF
IRF1010ES	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF1010ESL	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRF1010ESPBF	International Rectifier	TRANS MOSFET N-CH 60V 84A 3D2-PAK	Original	PDF
IRF1010ESPBF	International Rectifier	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1010ES with Lead Free Packaging	Original	PDF

IRF1010E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN-994 Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V	Original	PDF	IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
Untitled Abstract: No abstract text available Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF1010E O-220
Untitled Abstract: No abstract text available Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description	Original	PDF	IRF1010EPbF O-220 fo20AB
irf1010e Abstract: irf1010e equivalent *f1010e Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e
51a marking Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL Text: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	PDF	94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
irf1010e equivalent Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N	Original	PDF	O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
AN-994 Abstract: IRF1010EL IRF1010ES *f1010e Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description	Original	PDF	IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e
IRF1010E Abstract: No abstract text available Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF1010E O-220 O-220AB IRF1010E
AN-994 Abstract: IRF1010EL IRF1010ES Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description	Original	PDF	IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES
Untitled Abstract: No abstract text available Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description	Original	PDF	94965B IRF1010EPbF O-220
Untitled Abstract: No abstract text available Text: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	PDF	94724C IRF1010EZ IRF1010EZS IRF1010EZL O-220AB
Untitled Abstract: No abstract text available Text: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description	Original	PDF	94965B IRF1010EPbF O-220
Untitled Abstract: No abstract text available Text: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ	Original	PDF	IRF1010EZ O-220AB IRF1010
AN-994 Abstract: IRF1010EZ IRF1010EZL IRF1010EZS Text: PD - 95483 AUTOMOTIVE MOSFET Features O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax O Lead-Free O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF	Original	PDF	IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF EIA-418. O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS

Untitled Abstract: No abstract text available Text: IRF1010E l l l l l l TO-220AB Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation	Original	PDF	IRF1010E O-220AB O-220
AN-994 Abstract: IRF1010EZ IRF1010EZL IRF1010EZS 9472 Text: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	PDF	94724C IRF1010EZ IRF1010EZS IRF1010EZL O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS 9472
IRF1010EL Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES Text: PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.012Ω G ID = 83A	Original	PDF	IRF1010ES/L IRF1010ES) IRF1010EL) IRF1010EL ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
*f1010e Abstract: irf1010e equivalent IRF1010E Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF1010E O-220 *f1010e irf1010e equivalent IRF1010E
IRF1010E Abstract: No abstract text available Text: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier	OCR Scan	PDF	IRF1010E IRF1010E
IRF1010E Abstract: *f1010e Text: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®	OCR Scan	PDF	IRF1010E O-220 IRF1010E *f1010e
IRF1010E Abstract: IOR 1010 Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description	OCR Scan	PDF	IRF1010E IRF1010E IOR 1010
IRF1010E Abstract: *f1010e T0-262 EIA marking code RV surface mount diode Text: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated	OCR Scan	PDF	IRF101OES) IRF1010EL) IRF1010E *f1010e T0-262 EIA marking code RV surface mount diode
Untitled Abstract: No abstract text available Text: P D - 9 .1 7 2 0 International IQ R Rectifier IR F 1 0 1 0 E S /L HEXFET^ Power MOSFET Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 6 0 V	OCR Scan	PDF	IRF1010ES) IRF1010EL)
*f1010e Abstract: IRF1010E IRF 315 Text: PD - 9.1670A International IO R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = R ü S o n = Id 60V 0.012Í2 = 81 A(D Description Fifth G e n e ratio n H E X F E T s from International R ectifier	OCR Scan	PDF	IRF1010E *f1010e IRF1010E IRF 315

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IRF1010E Price and Stock

Infineon Technologies AG IRF1010EZPBF

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Infineon Technologies AG IRF1010EL

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Infineon Technologies AG IRF1010EZS

IRF1010E Datasheets (37)

IRF1010E Datasheets Context Search

AN-994

Untitled

Untitled

irf1010e

51a marking

irf1010e equivalent

AN-994

IRF1010E

AN-994

Untitled

Untitled

Untitled

Untitled

AN-994

Untitled

AN-994

IRF1010EL

*f1010e

IRF1010E

IRF1010E

IRF1010E

IRF1010E

Untitled

*f1010e