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    IRF15 Search Results

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    IRF15 Price and Stock

    Infineon Technologies AG IRF150P221AKMA1

    MOSFET N-CH 150V 186A TO247-3
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    DigiKey IRF150P221AKMA1 Tube 553 1
    • 1 $9.27
    • 10 $9.27
    • 100 $9.27
    • 1000 $4.33624
    • 10000 $4.33624
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    Avnet Americas IRF150P221AKMA1 Tube 600 400
    • 1 -
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    • 1000 $4.16247
    • 10000 $4.09273
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    IRF150P221AKMA1 Bulk 1
    • 1 $9.15
    • 10 $7.63
    • 100 $5.36
    • 1000 $5.36
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    Mouser Electronics IRF150P221AKMA1 988
    • 1 $8.91
    • 10 $8.75
    • 100 $4.62
    • 1000 $4.33
    • 10000 $4.33
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    Newark IRF150P221AKMA1 Bulk 646 1
    • 1 $4.12
    • 10 $4.12
    • 100 $4.12
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    Chip One Stop IRF150P221AKMA1 Tube 396
    • 1 $6.4
    • 10 $6.37
    • 100 $4.48
    • 1000 $4.47
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    EBV Elektronik IRF150P221AKMA1 27 Weeks 400
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    Infineon Technologies AG IRF150P220AKMA1

    MOSFET N-CH 150V 203A TO247-3
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    DigiKey IRF150P220AKMA1 Tube 367 1
    • 1 $11.55
    • 10 $11.55
    • 100 $11.55
    • 1000 $5.78112
    • 10000 $5.78112
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    Avnet Americas IRF150P220AKMA1 Tube 400
    • 1 -
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    • 1000 $5.7521
    • 10000 $5.45647
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    Mouser Electronics IRF150P220AKMA1 1,031
    • 1 $11.1
    • 10 $11.09
    • 100 $5.97
    • 1000 $5.78
    • 10000 $5.78
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    Newark IRF150P220AKMA1 Bulk 102 1
    • 1 $8.92
    • 10 $7.27
    • 100 $4.97
    • 1000 $4.86
    • 10000 $4.86
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    Chip One Stop IRF150P220AKMA1 Tube 550
    • 1 $6.02
    • 10 $5.99
    • 100 $5.86
    • 1000 $5.85
    • 10000 $5.85
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    EBV Elektronik IRF150P220AKMA1 27 Weeks 400
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    Win Source Electronics IRF150P220AKMA1 4,574
    • 1 -
    • 10 $8.749
    • 100 $6.7735
    • 1000 $6.7735
    • 10000 $6.7735
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    Rochester Electronics LLC IRF151

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF151 Bulk
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    Infineon Technologies AG IRF1503PBF

    MOSFET N-CH 30V 75A TO220AB
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    DigiKey IRF1503PBF Tube
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    Infineon Technologies AG IRF1503SPBF

    MOSFET N-CH 30V 75A D2PAK
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    DigiKey IRF1503SPBF Tube
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    IRF15 Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF150 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF150 International Rectifier HEXFET Transistor Original PDF
    IRF150 Intersil 40A, 100V, 0.055 ?, N-Channel Power MOSFET Original PDF
    IRF150 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF
    IRF150 Semelab N-Channel Power MOSFET Original PDF
    IRF150 Fairchild Semiconductor N-Channel Power MOSFETs, 40 A, 60 V/100 V Scan PDF
    IRF150 FCI POWER MOSFETs Scan PDF
    IRF150 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF150 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF150 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. Scan PDF
    IRF150 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF150 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF150 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF150 IXYS High Voltage Power MOSFETs Scan PDF
    IRF150 IXYS High Voltage Power MOSFETs Scan PDF
    IRF150 IXYS (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE Scan PDF
    IRF150 Motorola European Master Selection Guide 1986 Scan PDF
    IRF150 Motorola Switchmode Datasheet Scan PDF
    IRF150 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    IRF15 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF200

    Abstract: IRF100 20 k ohm 400W resistor irf500 IRN100S IRF150-IRF500 IRF400 IRF150 IRF50 IRF300
    Text: POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Applications Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W. Minimum resistance of 1ohm, +/-0.5% tolerance available.


    Original
    IRN50-IRN150 IRF150-IRF500 05ohm) 0W-100W. DC100V 10-50-10Hz, 90min 30min 500hours. IRF200 IRF100 20 k ohm 400W resistor irf500 IRN100S IRF150-IRF500 IRF400 IRF150 IRF50 IRF300 PDF

    mosfet vgs 5v

    Abstract: AN-1005
    Text: PD-95438 IRF1503PbF AUTOMOTIVE MOSFET Typical Applications O O O HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free D VDSS = 30V Features O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original
    PD-95438 IRF1503PbF O-220AB mosfet vgs 5v AN-1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF150 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


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    IRF150 300ms, PDF

    circuits of IRF150

    Abstract: MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
    Text: PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


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    90337F IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) parallelin52-7105 circuits of IRF150 MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF15S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 15 Load Current Max. (A)667m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)8.0 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule


    Original
    IRF15S Code6-65 NumberLN00600065 Description10W PDF

    IRF 5730

    Abstract: IRF1503L IRF1503S
    Text: PD - 95432 IRF1503SPbF IRF1503LPbF Typical Applications l l l HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free D VDSS = 30V Benefits l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


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    IRF1503SPbF IRF1503LPbF EIA-418. IRF 5730 IRF1503L IRF1503S PDF

    AN-1005

    Abstract: No abstract text available
    Text: PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D VDSS = 30V Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


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    PD-95438A IRF1503PbF O-220AB AN-1005 PDF

    Package outline To220ab

    Abstract: No abstract text available
    Text: IRF1503PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original
    IRF1503PbF O-220AB O-220AB. Package outline To220ab PDF

    IRF1503L

    Abstract: IRF1503S
    Text: PD - 94494A IRF1503S IRF1503L HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Benefits ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


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    4494A IRF1503S IRF1503L EIA-418. IRF1503L IRF1503S PDF

    IRF 504

    Abstract: EIA-418 irf 418 CODE PAR
    Text: IRF1503S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASS E MBL ED ON WW 02, 2000 IN T HE AS S E MBLY L INE "L" INT E RNAT IONAL RECT IF IE R LOGO Note: "P" in as s embly line


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    IRF1503S/LPbF F530S EIA-418. IRF 504 EIA-418 irf 418 CODE PAR PDF

    IRF1503

    Abstract: irf150
    Text: PD-94526A IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


    Original
    PD-94526A IRF1503 IRF1010 O-220AB IRF1503 irf150 PDF

    IRF 5730

    Abstract: IRF1503S IRF1503L
    Text: PD - 94494A IRF1503S IRF1503L HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Benefits ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature


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    4494A IRF1503S IRF1503L EIA-418. IRF 5730 IRF1503S IRF1503L PDF

    Untitled

    Abstract: No abstract text available
    Text: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE


    OCR Scan
    IRF15 OR/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan
    IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    MOSFET IRF150

    Abstract: IRF150 MOSFET HA711
    Text: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International


    OCR Scan
    T-39-13 IRF15Ü IRF151 IRF15S IRF153 MOSFET IRF150 IRF150 MOSFET HA711 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u


    OCR Scan
    IRF151 PDF

    IRF150

    Abstract: irf 151 IRF152 irf 150 IRF151
    Text: r z 7 SGS-THOMSON * JÆ. M g @ii[L[I ¥(MM(gS IRF 150 -151 IRF 152-153 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RDS(on Id IRF150 100 V 0.055 n 40 A IRF151 60 V 0.055 n 40 A IRF152 100 V 0.08 « 33 A IRF153 60 V 0.08 fi 33 A • 60-100 VOLTS - FOR DC/DC CONVERTERS


    OCR Scan
    IRF150 IRF151 IRF152 IRF153 irf 151 irf 150 PDF

    IRF150

    Abstract: circuits of IRF150 IRF150-153 IRF150 "on semiconductor"
    Text: flM FAIRCHILD SEMICONDUCTOR • H B n fflB F J J R C g L D dF | 34t.cit374□□E7fl7D A IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V H A Schlumberger Company Power And Discrete Division Description ' T-^Q-13 1 1 i TO-2Q4AE These devices are n-channel, enhancement mode, power


    OCR Scan
    IRF150-153 T-39-13 IRF150 circuits of IRF150 IRF150-153 IRF150 "on semiconductor" PDF

    IRF162

    Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
    Text: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan
    IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 PDF

    IRFI50

    Abstract: IRF150 DM160 D86FL2 irf151
    Text: IRF150,151 D86FL2.K2 [F@MÌRì”[ ìfiS S > FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan
    IRF150 D86FL2 300//s, IRFI50 DM160 irf151 PDF

    IRF151

    Abstract: No abstract text available
    Text: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A


    OCR Scan
    IRF151 56x43 18x18 IRF151ECTRICAL PDF

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan
    IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150 PDF

    Untitled

    Abstract: No abstract text available
    Text: im iF fi llll SEME IRF150SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 115 VDss 100V 0.25 3.0 ik 1 ^ ^DS(on) 0.070Q • HERMETICALLY SEALED SURFACE MOUNT PACKAGE i ' 1 1 FEATURES r t ^D(cont) o o> • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan
    IRF150SM O-220SM 300ms, fil331Ã PDF

    irf113

    Abstract: IRF111 IRFI30 1RF48 IRF224 IRF48 1RF220 1RF9Z32 IR 310A IRF035
    Text: - 250 - m € tt € Ta=25<1C f t Vds Vgs I d P d or * /CH * /CH 4- Vdg If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223


    OCR Scan
    1RF9Z32 O-220AB 1RF48 IRF034 irf222 irf223 irf224 O-204AA irf225 irf113 IRF111 IRFI30 IRF48 1RF220 IR 310A IRF035 PDF