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    IRF630N Search Results

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    IRF630N Price and Stock

    Infineon Technologies AG IRF630NPBF

    MOSFET N-CH 200V 9.3A TO220AB
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    DigiKey IRF630NPBF Tube 6,075 1
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    Avnet Americas IRF630NPBF Tube 3,890 8 Weeks 1
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    IRF630NPBF Bulk 16 Weeks, 4 Days 1
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    Mouser Electronics IRF630NPBF 6,009
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    Verical IRF630NPBF 142,896 24
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    IRF630NPBF 13,874 129
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    IRF630NPBF 8,000 1,000
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    IRF630NPBF 2,263 24
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    Arrow Electronics IRF630NPBF 142,904 8 Weeks 1
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    IRF630NPBF 8,029 8 Weeks 1,000
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    IRF630NPBF 2,017 8 Weeks 1
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    Newark IRF630NPBF Bulk 227 1
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    Quest Components IRF630NPBF 159
    • 1 $1.5
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    Rochester Electronics IRF630NPBF 1
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    TME IRF630NPBF 383 1
    • 1 $0.872
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    Ameya Holding Limited IRF630NPBF 1,000
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    Chip 1 Exchange IRF630NPBF 1,508
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    Chip1Stop IRF630NPBF Tube 13,874
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    EBV Elektronik IRF630NPBF 95,000 9 Weeks 1,000
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    New Advantage Corporation IRF630NPBF 76,000 1
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    Win Source Electronics IRF630NPBF 238,874
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    Wuhan P&S IRF630NPBF 1,000 1
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    Infineon Technologies AG IRF630NL

    MOSFET N-CH 200V 9.3A TO262
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    Infineon Technologies AG IRF630NS

    MOSFET N-CH 200V 9.3A D2PAK
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    DigiKey IRF630NS Bulk 200
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    Win Source Electronics IRF630NS 36,200
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    Infineon Technologies AG IRF630NLPBF

    MOSFET N-CH 200V 9.3A TO262
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    Infineon Technologies AG IRF630NSPBF

    MOSFET N-CH 200V 9.3A D2PAK
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    Win Source Electronics IRF630NSPBF 36,600
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    Find more IRF630N price and stock on Findchips.com

    IRF630N Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF630N Fairchild Semiconductor N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms Original PDF
    IRF630N International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF630N with Standard Packaging Original PDF
    IRF630N International Rectifier HEXFET Power MOSFET Original PDF
    IRF630N International Rectifier HEXFET Power MOSFET Original PDF
    IRF630N Transys Electronics Power MOSFET Original PDF
    IRF630NL Fairchild Semiconductor N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms Original PDF
    IRF630NL International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF630NL with Standard Packaging Original PDF
    IRF630NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF630NL Transys Electronics Power MOSFET Original PDF
    IRF630NLPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF630NL with Lead Free Packaging Original PDF
    IRF630NLPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF630NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF630N with Lead Free Packaging Original PDF
    IRF630NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF630NS Fairchild Semiconductor N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms Original PDF
    IRF630NS International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF630NS with Standard Packaging Original PDF
    IRF630NS International Rectifier HEXFET Power MOSFET Original PDF
    IRF630NS Transys Electronics Power MOSFET Original PDF
    IRF630NS International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF
    IRF630NSPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF630NS with Lead Free Packaging Original PDF
    IRF630NSPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF

    IRF630N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISL 2651

    Abstract: 630n
    Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n

    AN-994

    Abstract: IRF630NL IRL3103L
    Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET


    Original     		PDF IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. AN-994 IRF630NL IRL3103L

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    IRF630N

    Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
    Text: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models


    Original     		PDF IRF630N O-220 100oC, IRF630N TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3

    power relay N-channel mosfet

    Abstract: IRF630N N-Channel MOSFET 200v UPS RELAY CIRCUIT mosfet High-Speed Switching mosfet low idss n-channel mosfet transistor low power TRANSISTOR mosfet transistor irf630n mosfet low vgs
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630N DESCRIPTION •Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed


    Original     		PDF IRF630N power relay N-channel mosfet IRF630N N-Channel MOSFET 200v UPS RELAY CIRCUIT mosfet High-Speed Switching mosfet low idss n-channel mosfet transistor low power TRANSISTOR mosfet transistor irf630n mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: ^>£.m.l-C.ond\jLC.toi LPioducti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630N 0(2) DESCRIPTION • Drain Current -ID=9.3A@ TC=25°C • Drain Source Voltage: VDSS= 200V(Min)


    Original     		PDF IRF630N

    AN-994

    Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
    Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from


    Original     		PDF 5047A IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. AN-994 IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR

    IRF630N

    Abstract: IRF630NL IRF630NS
    Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω


    Original     		PDF 94005B IRF630N IRF630NS IRF630NL O-220 AN-994. O-220AB IRF630N) IRF630NS/L) IRF630N IRF630NL IRF630NS

    Untitled

    Abstract: No abstract text available
    Text: IRF630NPbF/SPbF/LPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF630NPbF/SPbF/LPbF O-220AB O-220AB.

    AN-994

    Abstract: IRF630N IRF630NL IRF630NS
    Text: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω


    Original     		PDF 4005A IRF630N IRF630NS IRF630NL O-220 preferre2-7105 AN-994 IRF630N IRF630NL IRF630NS

    IRF630N

    Abstract: IRF630NL IRF630NS
    Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω


    Original     		PDF 94005B IRF630N IRF630NS IRF630NL O-220 AN-994. O-220AB IRF630N) IRF630NS/L) IRF630N IRF630NL IRF630NS

    bly 93a

    Abstract: irf630npbf AN-994 IRF630NL IRL3103L
    Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET


    Original     		PDF IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994. bly 93a irf630npbf AN-994 IRF630NL IRL3103L

    630N

    Abstract: IRF630NS IRF630N IRF630NL
    Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 630N IRF630NS IRF630N IRF630NL

    IRF630NL

    Abstract: No abstract text available
    Text: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET


    Original     		PDF IRF630N IRF630NS IRF630NL O-220 IRF630NL

    Untitled

    Abstract: No abstract text available
    Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from


    Original     		PDF 5047A IRF630NPbF IRF630NSPbF IRF630NLPbF O-220 O-220AB AN-994.

    IRF620N

    Abstract: J 115 mosfet IRF630NL IRF630NS TD 1409
    Text: IRF630N/NS/NL Power MOSFET VDSS = 200V, RDS on = 0.30 ohm, ID = 9.3 A D G S IRF620N IRF630NS ELECTRICAL CHARACTERISICS at Parameter IRF630NL Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate to Source Leakage Current Min IDSS


    Original     		PDF IRF630N/NS/NL IRF620N IRF630NS IRF630NL 160VDC, 10VDC 100VDC, 25VDC, IRF620N J 115 mosfet IRF630NL IRF630NS TD 1409

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    VJ0805A271JXB

    Abstract: UCC27324 UCC27322 VJ1206Y473K 2a mosfet driver TL431CPKR Payton TPS2829 UCC35705 PANASONIC CAPACITOR
    Text: User’s Guide 48-V to 3.3-V RCD Forward with UCC35705 Voltage-Mode Control and Self-Driven Synchronous Rectification User’s Guide SLUU141 – March 2003 EVM IMPORTANT NOTICE Texas Instruments TI provides the enclosed product(s) under the following conditions:


    Original     		PDF UCC35705 SLUU141 VJ0805A271JXB UCC27324 UCC27322 VJ1206Y473K 2a mosfet driver TL431CPKR Payton TPS2829 PANASONIC CAPACITOR

    Untitled

    Abstract: No abstract text available
    Text: 101 N. Sepulveda Blvd., El Segundo, CA 90245 USA Telephone: +1 310 726 8000 www.irf.com Process Change Notification Date: PCN Reference: PCR Reference: Product Reference: December 5, 2013 S20209N P-1312-MD-0688 TO-220 MOSFET To Our Valued Customer: As always we appreciate your use of International Rectifier semiconductor products.


    Original     		PDF S20209N P-1312-MD-0688 O-220 alteFZ44ZPBF IRFZ46ZPBF IRL3103PBF IRL8113PBF IRLZ34NPBF IRLZ44ZPBF IRF9Z34NPBF

    4410 SO-8

    Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
    Text: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029


    Original     		PDF IRF3315PBF IRF3415PBF IRF3415SPBF IRFB23N15DPBF IRFB41N15DPBF IRFB52N15DPBF IRFB61N15DPBF IRFL4315PBF IRFPS3815PBF IRFS52N15DPBF 4410 SO-8 irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor