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    IRFBC40ASTRL Search Results

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    IRFBC40ASTRL Price and Stock

    Vishay Siliconix IRFBC40ASTRLPBF

    MOSFET N-CH 600V 6.2A D2PAK
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    DigiKey IRFBC40ASTRLPBF Cut Tape 600 1
    • 1 $4.51
    • 10 $3.14
    • 100 $4.51
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    IRFBC40ASTRLPBF Digi-Reel 600 1
    • 1 $4.51
    • 10 $3.14
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    IRFBC40ASTRLPBF Reel 800
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    • 1000 $1.99875
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    Vishay Intertechnologies IRFBC40ASTRLPBF

    MOSFETs N-Chan 600V 6.2 Amp
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    Mouser Electronics IRFBC40ASTRLPBF 737
    • 1 $4.28
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    Verical IRFBC40ASTRLPBF 800 800
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    IRFBC40ASTRLPBF 793 6
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    • 10 $0.204
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    Arrow Electronics IRFBC40ASTRLPBF 800 13 Weeks 800
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    IRFBC40ASTRLPBF Cut Strips 793 13 Weeks 1
    • 1 $0.2214
    • 10 $0.2179
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    Newark IRFBC40ASTRLPBF Reel 800
    • 1 $2.64
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    • 10000 $2.18
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    IRFBC40ASTRLPBF Cut Tape 800
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    TTI IRFBC40ASTRLPBF Reel 800
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    EBV Elektronik IRFBC40ASTRLPBF 14 Weeks 800
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    Vishay Intertechnologies IRFBC40ASTRRPBF

    MOSFETs N-Chan 600V 6.2 Amp
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    Mouser Electronics IRFBC40ASTRRPBF
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    • 1000 $2.21
    • 10000 $2.08
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    TTI IRFBC40ASTRRPBF Reel 800
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    • 1000 $2.19
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    IRFBC40ASTRL Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBC40ASTRL International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRFBC40ASTRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6.2A D2PAK Original PDF
    IRFBC40ASTRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6.2A D2PAK Original PDF

    IRFBC40ASTRL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    smps transformer Design using irfbc40a

    Abstract: IRFBC40AS SiHFBC40AS SiHFBC40AS-E3
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 18-Jul-08 smps transformer Design using irfbc40a IRFBC40AS SiHFBC40AS-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 12-Mar-07

    IRFBC40AS

    Abstract: SiHFBC40AS SiHFBC40AS-E3
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 18-Jul-08 IRFBC40AS SiHFBC40AS-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 11-Mar-11