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    IRFF312, Search Results

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    IRFF312, Price and Stock

    New Jersey Semiconductor Products, Inc. IRFF312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF312 3,663 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF312

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF312 2,930
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF312, Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF312 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF312 General Electric Power MOSFET field effect power transistor. Drain-source voltage 400 V. Scan PDF
    IRFF312 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF312 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF312 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF312 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF312 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF312 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF312 Unknown FET Data Book Scan PDF
    IRFF312 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF312 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF312R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF312R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF312R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF312, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF312

    Abstract: IRFF313
    Text: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF312 IRFF31 1RFF31 IRFF313

    DM 311 BH

    Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313
    Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312


    OCR Scan     		PDF S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313