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    Untitled

    Abstract: No abstract text available
    Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8329PbF TN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8329PbF AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 nC 24 Top View A D 5 4 G D 6 3 S D 7 2 S D 8 1 S S S S G D D D D D PQFN 3.3X3.3 mm


    Original     		PDF IRFHM8329PbF AN-994 com/technical-info/appnotes/an-994