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    IRFI840G Search Results

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    IRFI840G Price and Stock

    Vishay Siliconix IRFI840GPBF

    MOSFET N-CH 500V 4.6A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840GPBF Tube 469 1
    • 1 $3.68
    • 10 $3.68
    • 100 $3.68
    • 1000 $1.27547
    • 10000 $1.2095
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    Quest Components IRFI840GPBF 204
    • 1 $2.88
    • 10 $2.88
    • 100 $1.44
    • 1000 $1.44
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    Vishay Siliconix IRFI840GLCPBF

    MOSFET N-CH 500V 4.5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840GLCPBF Tube 102 1
    • 1 $3.95
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    • 1000 $1.38508
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    Vishay Siliconix IRFI840G

    MOSFET N-CH 500V 4.6A TO220-3
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    DigiKey IRFI840G Tube
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    Vishay Siliconix IRFI840GLC

    MOSFET N-CH 500V 4.5A TO220-3
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    DigiKey IRFI840GLC Tube 1,000
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    Vishay Intertechnologies IRFI840GPBF

    MOSFETs TO220 500V 4.6A N-CH MOSFET
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    Mouser Electronics IRFI840GPBF 3,389
    • 1 $2.46
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    RS IRFI840GPBF Bulk 1,000
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    Quest Components IRFI840GPBF 720
    • 1 $2.4
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    TTI IRFI840GPBF Tube 900 50
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    TME IRFI840GPBF 866 1
    • 1 $2.77
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    • 100 $1.58
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    Chip One Stop IRFI840GPBF Tube 13
    • 1 $2.94
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    EBV Elektronik IRFI840GPBF 11,750 13 Weeks 50
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    New Advantage Corporation IRFI840GPBF 9,400 1
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    • 100 $2.85
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    Find more IRFI840G price and stock on Findchips.com

    IRFI840G Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI840G International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI840G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI840G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.6A TO220FP Original PDF
    IRFI840G International Rectifier Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A) Scan PDF
    IRFI840G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI840G International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 500V, 4.6A, Pkg Iso TO-220 Fullpak Scan PDF
    IRFI840G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI840G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI840GLC International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI840GLC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI840GLC Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220FP Original PDF
    IRFI840GLC International Rectifier HEXFET Power Mosfet Scan PDF
    IRFI840GLC International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI840GLC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI840GLCPBF International Rectifier 500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF
    IRFI840GLCPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220FP Original PDF
    IRFI840GPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.6A TO220FP Original PDF
    IRFI840GPBF International Rectifier 500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF

    IRFI840G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94864 IRFI840GPbF • Lead-Free www.irf.com 1 12/03/03 IRFI840GPbF 2 www.irf.com IRFI840GPbF www.irf.com 3 IRFI840GPbF 4 www.irf.com IRFI840GPbF www.irf.com 5 IRFI840GPbF 6 www.irf.com IRFI840GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		IRFI840GPbF O-220 PDF

    SiHFI840G

    Abstract: IRFI840G SiHFI840G-E3
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 11-Mar-11 IRFI840G SiHFI840G-E3 PDF

    90-370

    Abstract: AN609 IRFI840GLC SiHFI840GLC
    Text: IRFI840GLC_RC, SiHFI840GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRFI840GLC SiHFI840GLC AN609, 11-May-10 90-370 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFI840GLC, SiHFI840GLC O-220 12-Mar-07 PDF

    IRFI840G

    Abstract: No abstract text available
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI840G PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI840G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.6 I(DM) Max. (A) Pulsed I(D)2.9 @Temp (øC)100# IDM Max (@25øC Amb)18 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ


    Original     		IRFI840G PDF

    E401

    Abstract: IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information
    Text: TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information Notes : This part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WIT H AS S EMBLY LOT CODE E401


    Original     		O-220 IRFI840G E401 IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information PDF

    IRFI840G

    Abstract: SiHFI840G SiHFI840G-E3
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 18-Jul-08 IRFI840G SiHFI840G-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF


    Original     		IRFI840GLCPbF O-220 PDF

    IRFI840G

    Abstract: SiHFI840G SiHFI840G-E3
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 18-Jul-08 IRFI840G SiHFI840G-E3 PDF

    IRFI840GLC

    Abstract: SiHFI840GLC SiHFI840GLC-E3 SiHFI840G
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFI840GLC, SiHFI840GLC O-220 11-Mar-11 IRFI840GLC SiHFI840GLC-E3 SiHFI840G PDF

    SiHFI840G

    Abstract: IRFI840G
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 12-Mar-07 IRFI840G PDF

    SiHFI840G

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFI840G PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF


    Original     		IRFI840GLCPbF O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94865 IRFI840GLCPbF • Lead-Free www.irf.com 1 12/4/03 IRFI840GLCPbF 2 www.irf.com IRFI840GLCPbF www.irf.com 3 IRFI840GLCPbF 4 www.irf.com IRFI840GLCPbF www.irf.com 5 IRFI840GLCPbF 6 www.irf.com IRFI840GLCPbF www.irf.com 7 IRFI840GLCPbF TO-220 Full-Pak Package Outline


    Original     		IRFI840GLCPbF O-220 PDF

    IRFI840G

    Abstract: No abstract text available
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI840G, SiHFI840G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI840G PDF

    SiHFI840G

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFI840GLC, SiHFI840GLC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFI840G PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94864 IRFI840GPbF • Lead-Free Document Number: 91161 12/03/03 www.vishay.com 1 IRFI840GPbF Document Number: 91161 www.vishay.com 2 IRFI840GPbF Document Number: 91161 www.vishay.com 3 IRFI840GPbF Document Number: 91161 www.vishay.com 4 IRFI840GPbF Document Number: 91161


    Original     		IRFI840GPbF O-220 12-Mar-07 PDF

    k d718

    Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
    Text: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated


    OCR Scan     		IRFI840GLC D-6380 k d718 d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC PDF

    IRFI840GLC

    Abstract: No abstract text available
    Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		IRFI840GLC D-6380 0021b77 IRFI840GLC PDF

    irf1840g

    Abstract: irf1840 irf18 IRFI840G
    Text: International i“R Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D I 500V V DSS= \ ^DS on = 0-85È2


    OCR Scan     		IRFI840G IRF1840G T50KC1 irf1840 irf18 PDF

    RG-910

    Abstract: IRFI840 aj 312 CD 1517 IRFI840G
    Text: International S Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 5 0 0 V ^DS on = 0 -8 5 Q l D = 4 .6 A


    OCR Scan     		IRFI840G O-220 RG-910 IRFI840 aj 312 CD 1517 IRFI840G PDF

    Untitled

    Abstract: No abstract text available
    Text: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating


    OCR Scan     		IRFI840G 00J517A O-220 PDF