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    IRFI9Z34N Price and Stock

    Infineon Technologies AG IRFI9Z34N

    MOSFET P-CH 55V 14A TO220AB FP
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    IRFI9Z34N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI9Z34N International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI9Z34N International Rectifier HEXFET Power MOSFET Original PDF
    IRFI9Z34N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI9Z34NPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI9Z34NPBF International Rectifier -55V Single P-Channel Lead-Free HEXFET Power MOSFET in a TO-220 Full Pak package Original PDF

    IRFI9Z34N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1530A

    Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		PDF IRFI9Z34N O-220 1530A f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44

    1530A

    Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		PDF IRFI9Z34N O-220 1530A IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E

    IRF9Z34N

    Abstract: No abstract text available
    Text: PD - 94867 IRFI9Z34NPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS on = 0.10Ω G The TO-220 Fullpak eliminates the need for additional


    Original     		PDF IRFI9Z34NPbF O-220 IRF9Z34N

    f1010e

    Abstract: MOSFET IRF 630 IRF9Z34N IRFI9Z34N IRF 10A 55V SEC irf 540 290A
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		PDF IRFI9Z34N O-220 f1010e MOSFET IRF 630 IRF9Z34N IRFI9Z34N IRF 10A 55V SEC irf 540 290A

    IRF9Z34N

    Abstract: low threshold mosfet p-channel TO-220
    Text: PD - 94867 IRFI9Z34NPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS on = 0.10Ω G The TO-220 Fullpak eliminates the need for additional


    Original     		PDF IRFI9Z34NPbF O-220 IRF9Z34N low threshold mosfet p-channel TO-220

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    IRF4905 equivalent

    Abstract: 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-220 O-247 IRL3302 IRL3202 9169IRFPC50LC IRFBC40LC IRFIBC40GLC IRFBE30 IRFIBE30G IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent

    IRF1010E

    Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
    Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)


    Original     		PDF IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1530A I R F I 9 Z 3 4 N HEXFET Power MOSFET Advanced Process Technology isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated V dss R DS on = -55V = 0.10Q Id = -14A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize


    OCR Scan     		PDF O-22Q IRFI9Z34N C-319