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    IRFP250 Price and Stock

    Infineon Technologies AG IRFP250NPBF

    MOSFET N-CH 200V 30A TO247AC
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    DigiKey IRFP250NPBF Tube 5,403 1
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    Avnet Americas IRFP250NPBF Tube 370 25
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    Mouser Electronics IRFP250NPBF 2,439
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    Rochester Electronics IRFP250NPBF 5,765 1
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    TME IRFP250NPBF 277 1
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    Chip One Stop IRFP250NPBF Tube 702
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    Chip-Germany GmbH IRFP250NPBF 13
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    EBV Elektronik IRFP250NPBF 52,800 9 Weeks 400
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    New Advantage Corporation IRFP250NPBF 42,400 1
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    Win Source Electronics IRFP250NPBF 22,990
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    Infineon Technologies AG IRFP250MPBF

    MOSFET N-CH 200V 30A TO247AC
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    DigiKey IRFP250MPBF Tube 2,508 1
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    Avnet Americas IRFP250MPBF Bulk 16 Weeks, 3 Days 1
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    IRFP250MPBF Tube 8 Weeks 800
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    Mouser Electronics IRFP250MPBF 2,278
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    Newark IRFP250MPBF Bulk 9,622 1
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    RS IRFP250MPBF Bulk 5
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    TME IRFP250MPBF 257 1
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    Ameya Holding Limited IRFP250MPBF 1,200
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    EBV Elektronik IRFP250MPBF 4,000 9 Weeks 400
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    New Advantage Corporation IRFP250MPBF 4,000 1
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    Win Source Electronics IRFP250MPBF 150,811
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    • 100 $0.553
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    Vishay Siliconix IRFP250PBF

    MOSFET N-CH 200V 30A TO247-3
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    DigiKey IRFP250PBF Tube 651 1
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    RS IRFP250PBF Bulk 500
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    New Advantage Corporation IRFP250PBF 1,625 1
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    IXYS Corporation IRFP250

    MOSFET N-CH 200V 30A TO247AD
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    DigiKey IRFP250 Tube 30
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    Quest Components IRFP250 1
    • 1 $3.24
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    STMicroelectronics IRFP250

    MOSFET N-CH 200V 33A TO247-3
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    DigiKey IRFP250 Tube 600
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    IRFP250 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP250 Fairchild Semiconductor 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Original PDF
    IRFP250 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFP250 Intersil 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Original PDF
    IRFP250 IXYS Standard Power MOSFET Original PDF
    IRFP250 Samsung Electronics N-Channel Power Mosfets Original PDF
    IRFP250 STMicroelectronics N-CHANNEL MOSFET0 Original PDF
    IRFP250 STMicroelectronics N-CHANNEL 200V 0.073 ? 33A TO-247 POWERMESH II Original PDF
    IRFP250 STMicroelectronics N-CHANNEL 200V 0.073 ? 33A TO-247 POWERMESH II MOSFET Original PDF
    IRFP250 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP250 FCI POWER MOSFETs Scan PDF
    IRFP250 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRFP250 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFP250 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP250 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP250 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP250 International Rectifier N-Channel(Hexfet Transistors) Scan PDF
    IRFP250 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP250 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFP250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFP250NPbF

    Abstract: IRFP250N 035H IRFPE30 irfp250n* applications 4.5v to 100v input regulator
    Text: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω


    Original
    5007A IRFP250NPbF O-247 IRFPE30 IRFP250NPbF IRFP250N 035H IRFPE30 irfp250n* applications 4.5v to 100v input regulator PDF

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet NOR gate
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original
    IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet NOR gate PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    IRFP250, SiHFP250 O-220AB O-247AC O-218 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    IRFP250, SiHFP250 O-247 O-220 12-Mar-07 PDF

    IRFP250A

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    IRFP250A IRFP250A PDF

    20U20

    Abstract: IRFP250 IC18 IC250 U200
    Text: Транзисторы для силовой электроники ПОЛЕВЫЕ ТРАНЗИСТОРЫ КП250 IRFP250 N-канальный МОП ПТ Uси=200 В; Rси=0.085 Ом; Iс=30 А z Высокие динамические характеристики


    Original
    IRFP250) 20U20 IRFP250 IC18 IC250 U200 PDF

    035H

    Abstract: IRFPE30
    Text: PD - 95008 IRFP250PbF • Lead-Free Document Number: 91212 2/11/04 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212


    Original
    IRFP250PbF O-247AC 12-Mar-07 035H IRFPE30 PDF

    IRFP250NPbF

    Abstract: 035H IRFPE30 4.5v to 100v input regulator
    Text: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω


    Original
    IRFP250NPbF O-247 O-247AC IRFPE30 IRFP250NPbF 035H IRFPE30 4.5v to 100v input regulator PDF

    IRFP250

    Abstract: irfp250 applications IRFP250PBF
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    IRFP250, SiHFP250 O-247 O-220 IRFP250 irfp250 applications IRFP250PBF PDF

    irfp250n

    Abstract: 4.5V to 100V input regulator
    Text: PD - 94008A IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A


    Original
    4008A IRFP250N O-247 O-247AC IRFPE30 IRFPE30 irfp250n 4.5V to 100V input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω


    Original
    5007A IRFP250NPbF O-247 IRFPE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFP250B PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan
    IRFP250A PDF

    IRFP250

    Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
    Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan
    IRFP250A G03b332 0G3b333 PDF

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Text: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan
    IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET PDF

    N-Channel 40V MOSFET 32a

    Abstract: IRFP250A
    Text: IRFP250A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = lD ■ E xtended S afe O pe ra ting A rea ■


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    IRFP250A N-Channel 40V MOSFET 32a IRFP250A PDF

    Untitled

    Abstract: No abstract text available
    Text: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRFP250, IRFP251, IRFP252, IRFP253 gatFP250, RFP252, RFP253 PDF

    HARRIS

    Abstract: IRFP250R diode GG 79 irfp250 mosfet irfp 250r mosfet irfp 250 N
    Text: 23 H A R R I S IRFP250/251/252/253 IRFP250R/251R/252R/253R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 4 7 • 27A and 33A, 150V - 200V TOP VIEW • rDS on = 0 .0 8 5 0 and 0.120H • Single Pulse Avalanche Energy Rated*


    OCR Scan
    IRFP250/251/252/253 IRFP250R/251R/252R/253R IRFP250, IRFP251, IRFP252, IRFP253 IRFP250R, IRFP251R, IRFP252R, IRFP253R HARRIS IRFP250R diode GG 79 irfp250 mosfet irfp 250r mosfet irfp 250 N PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Standard Power MOSFET IRFP250 vD SS = 200 V = 30 A = 85 mfl cont p DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T, = 25°C to 150°C 200 V v DQR T, = 25°C to 150-C; R GS = 1 M ii 200 V Continuous ±20 V Transient


    OCR Scan
    IRFP250 150-C; O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


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    IRFP250 O-247 PDF

    IRFP250R

    Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
    Text: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■


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    IRFP250R, IRFP251R, IRFP252R, IRFP253R 50V-200V IRFP252R IRFP253R IRFP25 IRFP250R irfp 250r IRFP251R p250a PDF

    VUO50

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 uA M ax. @ ■ V q s 2 = s ^D S(on) =


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    IRFP250A ERFP250A VUO50 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VOS= 200V


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    IRFP250A PDF