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    IRFR214 Search Results

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    IRFR214 Price and Stock

    Vishay Siliconix IRFR214TRPBF

    MOSFET N-CH 250V 2.2A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR214TRPBF Cut Tape 1,930 1
    • 1 $2
    • 10 $1.274
    • 100 $2
    • 1000 $0.6262
    • 10000 $0.6262
    		Buy Now
    IRFR214TRPBF Digi-Reel 1,930 1
    • 1 $2
    • 10 $1.274
    • 100 $2
    • 1000 $0.6262
    • 10000 $0.6262
    		Buy Now
    IRFR214TRPBF Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5783
    		Buy Now
    New Advantage Corporation IRFR214TRPBF 20,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.4929
    		Buy Now

    Vishay Siliconix IRFR214PBF-BE3

    MOSFET N-CH 250V 2.2A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR214PBF-BE3 Tube 864 1
    • 1 $2
    • 10 $2
    • 100 $0.90013
    • 1000 $0.67884
    • 10000 $0.67884
    		Buy Now

    Vishay Siliconix IRFR214

    MOSFET N-CH 250V 2.2A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR214 Tube 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.25
    		Buy Now

    Vishay Siliconix IRFR214TR

    MOSFET N-CH 250V 2.2A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR214TR Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.25
    		Buy Now

    Rochester Electronics LLC IRFR21496

    MOSFET N-CH 250V 2.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR21496 Bulk 993
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.32
    • 10000 $0.32
    		Buy Now
    Find more IRFR214 price and stock on Findchips.com

    IRFR214 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR214 Harris Semiconductor Power MOSFET Product Matrix Original PDF
    IRFR214 International Rectifier Power MOSFET Original PDF
    IRFR214 Intersil 2.2A, 250V, 2.000 ?, N-Channel Power MOSFETs Original PDF
    IRFR214 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR214 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.2A DPAK Original PDF
    IRFR214 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR214 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFR214 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR214 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR214 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 2.2A, Pkg Style TO-252AA Scan PDF
    IRFR214 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR214 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR214 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR2149A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR214A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFR214A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR214A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR214B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRFR214B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFR214BTF Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A Original PDF

    IRFR214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B

    irfu9210

    Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 irfu214 IRFR214 SiHFR214-E3

    irfu9210

    Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 IRFR214 IRFU214 SiHFR214-E3

    irfr214

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 12-Mar-07 irfr214

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384 IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


    Original     		PDF IRFR214PbF IRFU214PbF IRFR/U214PbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.2 I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)100# IDM Max (@25øC Amb)8.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFR214

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR214 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRFR214

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)

    irfu214

    Abstract: IRFR214 TB334
    Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


    Original     		PDF IRFR214, IRFU214 TA17443. irfu214 IRFR214 TB334

    U120

    Abstract: EIA-541 IRFR120 IRFU120
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF U120 EIA-541 IRFR120 IRFU120

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF

    SIHFR214TR

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) SIHFR214TR

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    EIA-541

    Abstract: IRFR120 IRFU120 U120
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 12/3/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF EIA-541 IRFR120 IRFU120 U120

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR214

    1RFR214

    Abstract: 25C2 AN-994 IRFR214 IRFU214
    Text: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß


    OCR Scan     		PDF IRFR214 IRFR214) IRFU214) i50Kn lntGIT13tà 1RFR214 25C2 AN-994 IRFR214 IRFU214

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214 S e m iconductor Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


    OCR Scan     		PDF IRFR214, IRFU214

    4562 mosfet

    Abstract: 4563 mosfet
    Text: IRFR214 IRFU214 çm H A R R IS S E M I C O N D U C T O R N-Channel Power MOSFETs Avalanche Energy Rated M arch 1994 Package Features TO-251AA TOP VIEW • 2.2A, 250V • r DS on = 2 -0 £ î ’ SOURCE • Single Puise Avalanche Energy Rated DRAIN TAB • SOA Is Power-Disslpation Limited


    OCR Scan     		PDF IRFR214 IRFU214 O-251AA O-252AA IRFR214, IRFU214 4562 mosfet 4563 mosfet

    Untitled

    Abstract: No abstract text available
    Text: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching


    OCR Scan     		PDF M655452 DDlSb70 IRFR214 IRFU214 IRFR214) IRFU214)