IRFU410 Search Results

IRFU410 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IRFU4105 MOSFET N-CH 55V 27A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU4105	Tube			75	1 - 10 - 100 $2.24653 1000 $2.24653 10000 $2.24653	Buy Now
Infineon Technologies AG IRFU4105Z MOSFET N-CH 55V 30A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU4105Z	Tube			75	1 - 10 - 100 $1.13653 1000 $1.13653 10000 $1.13653	Buy Now
Rochester Electronics LLC AUIRFU4104 MOSFET N-CH 40V 42A TO251-3-21
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRFU4104	Bulk			359	1 - 10 - 100 - 1000 $0.84 10000 $0.84	Buy Now
Infineon Technologies AG AUIRFU4104 MOSFET N-CH 40V 42A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRFU4104	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRFU4105ZTR MOSFET N-CH 55V 30A TO251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU4105ZTR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more IRFU410 price and stock on Findchips.com

IRFU410 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFU410	Fairchild Semiconductor	1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFET	Original	PDF
IRFU410	Intersil	1.5A, 500V, 7.000 ?, N-Channel Power MOSFETs	Original	PDF
IRFU410	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFU4104	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFU4104	International Rectifier	40V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4104 with Standard Packaging	Original	PDF
IRFU4104-701PBF	International Rectifier	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 42A IPAK	Original	PDF
IRFU4104PBF	International Rectifier	40V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4104 with Lead Free Packaging	Original	PDF
IRFU4104PBF	International Rectifier		Original	PDF
IRFU4105	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4105 with Standard Packaging	Original	PDF
IRFU4105	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFU4105	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFU4105	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFU4105	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs	Scan	PDF
IRFU4105	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRFU4105PBF	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105 with Lead Free Packaging	Original	PDF
IRFU4105PBF	International Rectifier		Original	PDF
IRFU4105Z	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4105Z with Standard Packaging	Original	PDF
IRFU4105Z	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFU4105ZPBF	International Rectifier	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105Z with Lead Free Packaging	Original	PDF
IRFU4105ZPBF	International Rectifier		Original	PDF

IRFU410 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ	Original	95374B IRFR4105ZPbF IRFU4105ZPbF AN-994	PDF
IFR-410 Abstract: IFU410 IFR410 irfu410 Text: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	IRFR410, IRFU410 TA17445. IFR-410 IFU410 IFR410 irfu410	PDF
Untitled Abstract: No abstract text available Text: IRFU410 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)1.5# I(DM) Max. (A) Pulsed I(D)1.2# @Temp (øC)100 IDM Max (@25øC Amb)3.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42# Minimum Operating Temp (øC)-55õ	Original	IRFU410	PDF
Untitled Abstract: No abstract text available Text: IRFR4104 IRFU4104 D VDSS = 40V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS on = 5.5mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi	Original	IRFR4104 IRFU4104 AN-994	PDF
irf power mosfet Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3 Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier	Original	5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) EIA-481 EIA-541. EIA-481. irf power mosfet IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3	PDF
Untitled Abstract: No abstract text available Text: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A S Fifth Generation HEXFETs from International Rectifier	Original	IRFR/U4105PbF IRFR4105) IRFU4105) O-252AA) EIA-481 EIA-541. EIA-481.	PDF
IRFR410B Abstract: IRFU410B Text: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFR410B IRFU410B IRFU410B	PDF
Untitled Abstract: No abstract text available Text: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ	Original	95374B IRFR4105ZPbF IRFU4105ZPbF IRFU4105ZPbFr AN-994	PDF
AN-994 Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105 Text: PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching RDS(on) = 0.045Ω ID = 25A➄ Description	Original	IRFR\U4105 IRFR4105) IRFU4105) AN-994 IRFR120 IRFR4105 IRFU120 IRFU4105	PDF
Untitled Abstract: No abstract text available Text: IRFU4105 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)25# I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)46# Minimum Operating Temp (øC)-55	Original	IRFU4105	PDF
AN-994 Abstract: EIA-541 IRFR4105Z IRFU120 IRFU4105Z R120 Text: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V	Original	5374A IRFR4105ZPbF IRFU4105ZPbF AN-994 AN-994 EIA-541 IRFR4105Z IRFU120 IRFU4105Z R120	PDF
irfu410a Abstract: No abstract text available Text: IRFU410A Advanced Power MOSFET IRFU410A BVDSS = 520 V RDS on = 10.0 Ω ID = 1.2 A Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Improved High Temperature Reliability	Original	IRFU410A O-220 irfu410a	PDF
IRFR4104 Abstract: IRFU4104 Text: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5mΩ	Original	IRFR4104 IRFU4104 AN-994 IRFR4104 IRFU4104	PDF
diode MARKING CODE 18A Abstract: IRFR4105Z IRFU4105Z b965 Text: PD - 94752 IRFR4105Z IRFU4105Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 24.5mΩ	Original	IRFR4105Z IRFU4105Z AN-994 diode MARKING CODE 18A IRFR4105Z IRFU4105Z b965	PDF

IRFR4105Z Abstract: IRFU4105Z 10E-06 Text: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V	Original	5374A IRFR4105ZPbF IRFU4105ZPbF AN-994 IRFR4105Z IRFU4105Z 10E-06	PDF
NTA-100 Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using	Original	91302C IRFR/U4105 IRFR4105) IRFU4105) O-252AA NTA-100 AN-994 IRFR4105 IRFU4105 IRFZ34N	PDF
AN-994 Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105 U4105 Text: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching	Original	IRFR\U4105 IRFR4105) IRFU4105) AN-994 IRFR120 IRFR4105 IRFU120 IRFU4105 U4105	PDF
irfz34n equivalent Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using	Original	91302C IRFR/U4105 IRFR4105) IRFU4105) irfz34n equivalent AN-994 IRFR4105 IRFU4105 IRFZ34N	PDF
AN-1005 Abstract: No abstract text available Text: PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS on = 5.5mΩ	Original	95425B IRFR4104PbF IRFU4104PbF AN-994 AN-1005	PDF
IFR410 Abstract: IFU410 IRFU410 IFR-410 IRFR410 TB334 Text: IRFR410, IRFU410 Data Sheet July 1999 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	IRFR410, IRFU410 TA17445. IFR410 IFU410 IRFU410 IFR-410 IRFR410 TB334	PDF
AN-994 Abstract: IRFR4105 IRFU4105 IRFZ34N mosfet IRFZ34N Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using	Original	91302C IRFR/U4105 IRFR4105) IRFU4105) AN-994 IRFR4105 IRFU4105 IRFZ34N mosfet IRFZ34N	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1302A International IO R Rectifier IRFR/U4105 HEXFET Power M O SFET Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^D S (o n) = 0 .0 4 5 0 lD = 28A(D	OCR Scan	IRFR4105) IRFU4105) IRFR/U4105 C-398	PDF
Untitled Abstract: No abstract text available Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	IRFR410, IRFU410 000i2	PDF
Untitled Abstract: No abstract text available Text: IRFU410A Advanced Power MOSFET IRFU410A B V • Improved Inductive Ruggedness ■ Rugged Polysilicon Gate Cell Structure ■ Fast Switching Times ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Improved High Temperature Reliability	OCR Scan	IRFU410A	PDF

Privacy Settings

IRFU410 Search Results

IRFU410 Price and Stock

Infineon Technologies AG IRFU4105

Infineon Technologies AG IRFU4105Z

Rochester Electronics LLC AUIRFU4104

Infineon Technologies AG AUIRFU4104

Vishay Siliconix IRFU4105ZTR

IRFU410 Datasheets (27)

IRFU410 Datasheets Context Search

Untitled

IFR-410

Untitled

Untitled

irf power mosfet

Untitled

IRFR410B

Untitled

AN-994

Untitled

AN-994

irfu410a

IRFR4104

diode MARKING CODE 18A

IRFR4105Z

NTA-100

AN-994

irfz34n equivalent

AN-1005

IFR410

AN-994

Untitled

Untitled

Untitled