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International Rectifier IRFY240CM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFY240CM		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NexGen Digital	IRFY240CM		700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier IRFY240C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NexGen Digital	IRFY240C		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFY240 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFY240	International Rectifier	200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY	Original	PDF
IRFY240	Semelab	N-Channel Power MOSFET for HI-REL Applications	Original	PDF
IRFY240	International Rectifier	HEXFET Transistors	Scan	PDF
IRFY240	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF
IRFY240	New England Semiconductor	TRANS MOSFET N-CH 200V 12A 3TO-257	Scan	PDF
IRFY240C	International Rectifier	200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY	Original	PDF
IRFY240C	Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package	Original	PDF
IRFY240C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY240CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY240CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY240CM	International Rectifier	Power MOSFET	Original	PDF
IRFY240CM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY240M	International Rectifier	200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY	Original	PDF
IRFY240M	Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package	Original	PDF

IRFY240M	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF
IRFY240M	International Rectifier	HEXFET Transistors	Scan	PDF

IRFY240 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFY240M Abstract: No abstract text available Text: IRFY240M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)	Original	IRFY240M O257AB O257AB O220M) 13-Sep-02 IRFY240M	PDF
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 200 Volt, 0.21 Ohm, 14A MOSFET Ceramic Hermetic Package Fast Switching Low RDS on Electrically Equivalent to IRFY240 MAXIMUM RATINGS	Original	SHD219403 IRFY240 SHD219403	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)	Original	IRFY240 IRFY240M O-257AB 330mJ O220M O-257AB) IRFY240	PDF
IRFY240 Abstract: No abstract text available Text: IRFY240 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 200V 12A Ω 0.19Ω FEATURES 0.89	Original	IRFY240 IRFY240	PDF
IRFY240C Abstract: IRFY240CM Text: Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	1289B IRFY240CM IRFY240C IRFY240CM	PDF
MOSFET 7311 Abstract: IRFY240C Text: IRFY240C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL	Original	IRFY240C O257AA MOSFET 7311 IRFY240C	PDF
Untitled Abstract: No abstract text available Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International	Original	PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500	PDF
Untitled Abstract: No abstract text available Text: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International	Original	O-257AA) IRFY240 IRFY240M IRFY240 IRFY240, O-257AA	PDF
9522 transistor Abstract: 9522 Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)	Original	IRFY240 IRFY240M O-257AB O220M O-257AB) IRFY240M 9522 transistor 9522	PDF
IRFY240C Abstract: semelab mosfet Text: IRFY240C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)	Original	IRFY240C O257AB O257AB O220M) 13-Sep-02 IRFY240C semelab mosfet	PDF
IRFY240C Abstract: HEXFET pinout IRFY240CM Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International	Original	PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500 HEXFET pinout IRFY240CM	PDF
IRFY240 Abstract: SHD219403 Text: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 200 Volt, 0.21 Ohm, 14A MOSFET Ceramic Hermetic Package Fast Switching Low RDS on Electrically Equivalent to IRFY240 MAXIMUM RATINGS	Original	SHD219403 IRFY240 IRFY240 SHD219403	PDF
IRFY240C Abstract: IRFY240CM Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	1289B IRFY240CM IRFY240C IRFY240CM	PDF
IRFY240 Abstract: IRFY240C IRFY240CM IRFY240M Text: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International	Original	O-257AA) IRFY240 IRFY240M IRFY240 IRFY240, O-257AA IRFY240C IRFY240CM IRFY240M	PDF

9522 transistor Abstract: No abstract text available Text: N-CHANNEL POWER MOSFET IRFY240 • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)	Original	IRFY240 O-257AB O220M O-257AB) 9522 transistor	PDF
Untitled Abstract: No abstract text available Text: PD - 91289D POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number ID Eyelets IRFY240C RDS(on) 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic HEXFET® MOSFET technology is the key to International	Original	91289D O-257AA) IRFY240C IRFY240CM IRFY240CM cho16 5M-1994. O-257AA.	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
shd2263 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD226403 SHD226403R TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 200 Volt, 0.21 Ohm, 14A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on	Original	SHD2263 SHD226403 SHD226403R IRFY240 CHARAC403 SHD226403R O-257 shd2263	PDF
IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261	PDF
irf5n5210sc Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)	Original	4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS	PDF
br 003 m 527 Abstract: IRFY240 K120 Text: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage	OCR Scan	IRFY240 O-257 00A/pS, br 003 m 527 IRFY240 K120	PDF
Untitled Abstract: No abstract text available Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S	OCR Scan	IRFY240	PDF
Untitled Abstract: No abstract text available Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17	OCR Scan	IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460	PDF
irfm9034 Abstract: No abstract text available Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel	OCR Scan	IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034	PDF

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IRFY240 Price and Stock

International Rectifier IRFY240CM

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IRFY240 Datasheets (16)

IRFY240 Datasheets Context Search

IRFY240M

Untitled

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IRFY240

IRFY240C

MOSFET 7311

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9522 transistor

IRFY240C

IRFY240C

IRFY240

IRFY240C

IRFY240

9522 transistor

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IRF460

shd2263

IRFM9034

irf5n5210sc

br 003 m 527

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irfm9034